KSA709CYTA Allicdata Electronics
Allicdata Part #:

KSA709CYTA-ND

Manufacturer Part#:

KSA709CYTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 150V 0.7A TO-92
More Detail: Bipolar (BJT) Transistor PNP 150V 700mA 50MHz 800m...
DataSheet: KSA709CYTA datasheetKSA709CYTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Power - Max: 800mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSA709
Description

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KSA709CYTA are single bipolar junction transistors (BJTs) that are normally used to amplify or switch electronic signals. Bipolar transistors are three-terminal active devices composed of three layers: the collector, base and emitter. In contrast to other transistors, such as field-effect or Darlington transistors, single bipolar transistors are made of two PN junctions in one device.

The KSA709CYTA transistor is designed for a wide range of applications in the consumer and industrial electronics industry, such as amplifiers, switching systems and other low-power and low-voltage applications. It can be used in many cases because it has a low collector-emitter (Vce) voltage of 5 volts, a low collector-emitter saturation voltage of 0.5 volts, and a fast transitioning time of 600 ns. In addition, the KSA709CYTA has a collector-base (Vcb) voltage of 10 volts, an emitter-base (Veb) voltage of 5 volts and a collector current of 200 milliamps.

The KSA709CYTA has a variety of useful features, such as a high current gain, low input and output capacitances and low noise. The device offers a low noise figure, which is beneficial for applications where noise is a factor. Additionally, this transistor has a low collector-base capacitance and a high frequency cut-off point of 40 MHZ, making it suitable for high frequency applications. It also has an extremely fast switching time, which makes it ideal for use in pulse circuits.

The KSA709CYTA device employs a vertical PNP structure, which allows it to generate an extremely high current gain. The high current gain is achieved by transferring a large amount of current from the emitter to the collector through the base. This process of current transfer is known as the bipolar operation. This transistor typically has a high current gain of up to 350, making it suitable for applications that require a large amount of current.

The KSA709CYTA also features a low voltage drop across its terminals, making the device suitable for use in low voltage applications. Additionally, this transistor has a low power consumption, allowing it to be used in a wide variety of low power applications. The device is therefore well suited for use in battery-powered or portable devices.

The KSA709CYTA is an excellent choice for use in many different types of applications, such as DC and AC circuits, amplifiers, switching systems and other low-power and low-voltage applications. Its high current gain and low voltage drop make it especially suitable for use in low voltage and low power applications. In addition, its fast switching time and low noise figure make it well suited for use in pulse circuits and applications that require a low level of electrical noise. By combining these features, the KSA709CYTA transistor is an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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