KSA708YTA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	700mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 50mA, 2V
Power - Max:	800mW
Frequency - Transition:	50MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	KSA708

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Introduction

The KSA708YTA is a single-channel, NPN, silicon-based bipolar junction transistor (BJT). It is manufactured as a two-pin surface mount pin-and-socket package and is specifically designed for use in high-density, high-output current power amplifier applications. It is a high-gain BJT designed for optimal performance and lightweight construction.

Specifications

The KSA708YTA features a wide range of operating temperature ratings, including an extended operating temperature range of -55°C to +125°C. It has a maximum collector current of 0.6 A and a maximum charging current of 8A. Its minimum gain is 300 and its maximum power dissipation is 200W.

Features & Benefits

The KSA708YTA has several features and benefits compared to traditional BJTs. These include: - Low on-resistance: The on-resistance of the KSA708YTA is significantly lower than traditional BJTs, which reduces power consumption, extends operating life and lowers risk of overheating. - High-frequency response: The KSA708YTA has a high-frequency response in the ultra-high-frequency (UHF) range, which increases its capabilities in applications where low-frequency signals are not adequate. - High-voltage capability: The KSA708YTA has a maximum rated voltage of 60V, which increases its performance in applications that require high-voltage operation.- High-reliability ratings: The KSA708YTA has a minimum rated reliability of 100 million operations at maximum rated operating temperature and voltage, which ensures it is suitable for long-term and high-performance applications.

Application Fields

The KSA708YTA is primarily designed for use as a power amplifier in high-density, high-output current power amplifier applications. It is a suitable for applications in a wide range of industries, including automotive, communications, and industrial electronics.The KSA708YTA is designed for use in applications such as power amplifiers, voltage regulators, switching power supplies, and high-efficiency amplifier circuits. It is also suitable for use in audio amplifiers.

Working Principle

The KSA708YTA is a BJT, which uses a combination of electrical characteristics and physical components to manipulate a current flowing through it. In a BJT, current is transferred between two semiconductor regions, the emitter and collector, with the emitter controlling the amount of current allowed to flow through the transistor. This is done by modulating the voltage applied to the input or base of the transistor.The KSA708YTA has a higher current gain and higher frequency response than traditional BJTs due to its design, allowing it to be used in more high-output current applications. The wide operating temperature range of the KSA708YTA also provides increased versatility compared to traditional BJTs.

Conclusion

The KSA708YTA is a single-channel NPN BJT designed for use in high-density, high-output current power amplifier applications. Its features and benefits include a low on-resistance, high-frequency response, high-voltage capability, and high-reliability ratings. The KSA708YTA is suitable for a variety of applications in different industries and operates by transferring current between two semiconductor regions.

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