KSA709GTA Allicdata Electronics
Allicdata Part #:

KSA709GTA-ND

Manufacturer Part#:

KSA709GTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 150V 0.7A TO-92
More Detail: Bipolar (BJT) Transistor PNP 150V 700mA 50MHz 800m...
DataSheet: KSA709GTA datasheetKSA709GTA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Power - Max: 800mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSA709
Description

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KSA709GTA is a single-chip bipolar transistor manufactured by ON Semiconductor. It is usually used as a low-cost gate driver for digital logic designs. As a low-cost gate driver, the KSA709GTA provides a low-cost interface for switching digital signals between two devices or circuits.

The KSA709GTA is a dual-gate NPN silicon transistor with an emitter-collector voltage rating of 5 V. It is rated at a maximum collector-emitter voltage of 15 V and possesses a peak collector current rating of 100 mA. The KSA709GTA features an adjustable rise and fall time, which allows designers to optimize their efficiency. Its maximum power dissipation is 1 watt, and its maximum gate voltage is 5 V. Additionally, the KSA709GTA posses a high current gain of up to 1000.

The working principle of the KSA709GTA relies on the NPN silicon transistor. NPN transistors are formed from two N-type semiconductor layers and a P-type semiconductor layer in the middle, which provides the two N-type layers with conducting channel for the electrons. When a voltage is applied across the base-emitter junction to turn on the transistor, the electrons are able to flow from the emitter into the collector. The current gain of an NPN transistor (hFE) is determined by the ratio of the collector current to the base current.

The KSA709GTA is primarily used as a low-cost gate driver for digital logic designs. Gate drivers are used to switch digital signals between two devices or circuits without the need for the additional components. The KSA709GTA offers adjustable rise and fall times, which helps to optimize the efficiency of the gate driver. It also features a high current gain, which helps to reduce current losses. Additionally, the KSA709GTA offers a low-cost, space-saving interface for switching digital signals between two devices or circuits.

The KSA709GTA is an efficient, low-cost single-chip bipolar transistor designed for low-cost gate driver applications. It offers adjustable rise and fall times, high current gains, and a low-cost, space-saving interface for switching digital signals between two devices or circuits. Its high current gain and low emitter-collector voltage rating make it an ideal solution for digital logic designs.

The specific data is subject to PDF, and the above content is for reference

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