| Allicdata Part #: | KSC2258AS-ND |
| Manufacturer Part#: |
KSC2258AS |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 300V 0.1A TO-126 |
| More Detail: | Bipolar (BJT) Transistor NPN 300V 100mA 100MHz 4W ... |
| DataSheet: |  KSC2258AS Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 300V |
| Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max): | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 40mA, 20V |
| Power - Max: | 4W |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-225AA, TO-126-3 |
| Supplier Device Package: | TO-126-3 |
Description
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KSC2258AS is a single bipolar junction transistor (BJT) manufactured by Korean Semiconductor company. It is often used in high frequency and low noise applications. The device is a NPN transistor with an optimized dielectric barrier layer PPO packaging.Structure of KSC2258AS KSC2258AS is an NPN type bipolar junction transistor consisting of four parts namely the emitter, base, collector and dielectric barrier layer (DBL). The structure of the transistor is a single-piece metal can and a P-type substrate. The collector and the base are connected together at one end and the emitter is connected to ground at the other end of the metal can. The DBL is a thin dielectric barrier layer that insulates the emitter and collector to reduce the leakage current of the transistor.Application Field of KSC2258AS KSC2258AS is mainly used in high frequency and low noise applications such as radio receivers, amplifiers, mixers and magnetics. It is ideal for low voltage, low current and high frequency applications since it has a low threshold voltage and low leakage current.The high frequency performance of the transistor makes it an ideal choice for high frequency applications such as wireless transmitters, receivers, oscillators and filters. Moreover, the low density of the DBL helps in reducing the switching losses and enables the transistor to operate at high speed. Additionally, the low leakage current reduces the power dissipation of the transistor and helps in increasing efficiency and reliability.Working Principle of KSC2258AS The KSC2258AS works on the principle of junctions between the base and collector of an NPN type bipolar junction transistor. When a forward bias voltage is applied across the junction, electrons from the base region cross the potential barrier imposed by the collector to form a depletion region in the collector region that drags electrons from the collector back to the base region. This process generates a current flow between collector and emitter of the transistor. The magnitude of the current depends on the size of the injected hole.The current flow increases with increased base-collector bias voltage and reaches a saturation limit at a certain level of the bias voltage. At this saturation current, the voltage drop between the collector and emitter is nearly equal to the applied bias voltage and the current no longer increase with the increase of the collector emitter bias.When a reverse bias voltage is applied across the collector and emitter, the electrons in the collector region slightly move away from the collector side, decreasing the current flow considerably. Further increase in the reverse bias voltage more depletion region forms and the current finally drops to zero.
The specific data is subject to PDF, and the above content is for reference
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