
Allicdata Part #: | KSC2316YBU-ND |
Manufacturer Part#: |
KSC2316YBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 120V 0.8A TO-92L |
More Detail: | Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSC2316 |
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The KSC2316YBU is a single-transistor bipolar junction transistor (BJT) used in many applications in modern electronics. This type of transistor has two active layers sandwiched between two outer layers, which are called base and collector layers. When current is passed through the base layer, it creates a potential difference that changes the behavior of the two central layers. This transistor is capable of producing a gain of thousands and of driving several hundreds of milli amperes.
One of the most common applications of the KSC2316YBU is in RF power amplifier systems. This type of transistor is commonly used in radio transmitters to amplify the incoming signal. As its gain is very high, it can create higher levels of output power than other types of transistors. This makes it ideal for use in radio frequency applications, where high output levels are required.
The KSC2316YBU is also used in various applications such as rectifiers, switches, and low-power amplifiers. It is widely used in automotive power electronics due to its high breakdown voltage and efficiency. This type of transistor is also used for power management in mobile devices, due to its low standby current.
The working principle of the KSC2316YBU is based on the semiconductor doping process. This type of transistor has its two active layers sandwiched between two outer layers, which are called base and collector layers. When current is passed through the base layer, it creates a potential difference that changes the behavior of the two central layers. This action is known as biasing and it allows the transistor to switch on and off depending on the current passed through the base.
The KSC2316YBU has excellent gain characteristics, good power handling capacity, and very low distortion. This combination makes it ideal for use in audio amplifiers, where it is used to effectively amplify music signals. Its high breakdown voltage also makes it suitable for powering sensitive electronic equipment. Additionally, its low input capacitance and low turn-off delay make it ideal for use in digital circuits and switching applications.
The KSC2316YBU can also be used in linear applications, like power amplification. This is because this transistor has good linearity characteristics. Its collector is also held at a constant voltage, which helps reduce noise generated by the device. This makes it particularly useful for audio amplifiers and power supplies requiring low noise operation.
In conclusion, the KSC2316YBU is a versatile single-transistor bipolar junction transistor. It is widely used in a variety of applications including RF power amplifiers, rectifiers, switches, low-power amplifiers, audio amplifiers, and power supplies. Its excellent gain characteristics, power handling capacity, and high breakdown voltage make it ideal for use in a variety of different applications. Additionally, its low input capacitance, low turn-off delay, and linearity characteristics make it especially suitable for use in audio amplifiers, digital circuits, and other power-related applications.
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