KSC2330YBU Allicdata Electronics
Allicdata Part #:

KSC2330YBU-ND

Manufacturer Part#:

KSC2330YBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.1A TO-92L
More Detail: Bipolar (BJT) Transistor NPN 300V 100mA 50MHz 1W T...
DataSheet: KSC2330YBU datasheetKSC2330YBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92-3
Base Part Number: KSC2330
Description

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Whether it\'s an industrial, commercial or consumer electronic application, KSC2330YBU transistors have seen use in many different applications. This type of single bipolar transistor is used in circuits with low current and low switching frequency. It is ideal for power amplifier design in audio applications, and can be used for a variety of other applications as well.

The KSC2330YBU transistor has two applications: emitter-follower and common emitter. In emitter-follower operation, the input signal is applied to the base of the transistor, while the output signal is taken from the emitter. This type of application is typically used to amplify weak signals or to drive high-impedance loads. The emitter follower configuration also has low distortion and can be used as a buffer amplifier.

In common emitter configuration, the input signal is applied to the base, while the output signal is taken from the collector. This arrangement provides better gain than the emitter follower configuration, and is commonly used to drive higher current and voltage signals. Common emitter arrangement is also used in amplifier design as it provides good linearity and gain accuracy.

KSC2330YBU transistors have a hFE of 320 to 450, with a Collector-Emitter saturation voltage of -0.5 V and a maximum collector current of 2.5 A. The Ic max of the transistor is 2.5 A and the Vceo is 30V. The device has a very low on-state resistance and is suitable for a wide range of applications. It can be used in switching and linear circuits, and its high-current, high-impedance transistors make it ideal for audio, automotive and consumer electronics applications.

The working principle of a transistor is based on the theory of semiconductor physics and energy bands. A transistor is built using two or more semiconductor materials. The most common type of transistor is the PNP or NPN, which is composed of three layers: P-type, N-type and the Base. When a voltage is applied to the Base layer, it changes the characteristics of the N and P materials, allowing current to flow from the Collector to the Emitter.

The KSC2330YBU is a low-cost, high-quality single bipolar transistor perfect for a wide range of applications. Its moderate hFE and low saturation voltage make it ideal for audio, automotive and consumer electronics applications. The transistor has a high-performance low-on-state resistance and a maximum collector current of 2.5A. It is suitable for power amplifier design, switching and linear circuits.

The specific data is subject to PDF, and the above content is for reference

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