Allicdata Part #: | KSC2752OSTU-ND |
Manufacturer Part#: |
KSC2752OSTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 0.5A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 500mA 1W Throug... |
DataSheet: | KSC2752OSTU Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 60mA, 300mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126-3 |
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.The KSC2752OSTU is an NPN transistor used in various applications. It is classified as a single bipolar junction transistor (BJT). The KSC2752OSTU is a general purpose transistor, designed for both high frequency and general signal amplification.
The KSC2752OSTU is a low noise transistor designed to reduce total harmonic distortion (THD). It is also designed with short circuit protection and improved current stability. The load should be matched with the collector current.
The collector-emitter voltage range of the KSC2752OSTU ranges from -50V to 250V, making it suitable for higher voltage applications. The collector-base voltage range is from -30 to 100V. The gate drive impedance should be kept at lower than 10Kohm to ensure proper operation. The maximum collector current of the KSC2752OSTU is 500mA.
The KSC2752OSTU has a low voltage drop, making it suitable for applications that require a low voltage drop, such as power supplies, converters, and amplifiers. It has a low collector-emitter saturation voltage, with a typical value of 0.2 - 0.25V. This low voltage drop makes the KSC2752OSTU suitable for powering applications that require low power consumption.
The KSC2752OSTU has a maximum power dissipation of 1.70W and a thermal resistance of 230 C/W. The thermal resistance is a measure of the device\'s ability to dissipate heat. The typical capacitance values of the KSC2752OSTU range from 2-5pF and the gain-bandwidth product is 5MHz.
The working principle of the KSC2752OSTU is based on the effect of the positive and negative ions, which are generated by the passage of current. As the current passes through the base region, the positive and negative ions create an electric field and attract electrons from the base region to the collector region. This results in the formation of a depletion zone and the development of an electric field between the collector and the emitter. The magnitude of the electric field determines the conductivity of the transistor, which can be changed by altering the base current.
The KSC2752OSTU has many applications, such as switching, limiting, and protection circuits. It can also be used in voltage regulation, logic circuits, and amplifiers. It can also be used in power supplies, HF (high frequency) AC or DC, and DC-DC converters. The KSC2752OSTU is also used in some power amplifiers and switching circuits.
In conclusion, the KSC2752OSTU is a low noise NPN single bipolar junction transistor (BJT). It is designed for both high frequency and general signal amplification, with a wide range of collector-emitter voltages and currents. It has a low voltage drop and a high power dissipation rating, as well as a low thermal resistance. Its working principle is based on the effect of the positive and negative ions generated by the passing of current and it has many applications in various devices.
The specific data is subject to PDF, and the above content is for reference
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