| Allicdata Part #: | KSC5603DTU-ND |
| Manufacturer Part#: |
KSC5603DTU |
| Price: | $ 1.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 800V 3A TO-220 |
| More Detail: | Bipolar (BJT) Transistor NPN 800V 3A 5MHz 100W Thr... |
| DataSheet: |  KSC5603DTU Datasheet/PDF |
| Quantity: | 973 |
| 1 +: | $ 1.00800 |
| 10 +: | $ 0.90153 |
| 100 +: | $ 0.70308 |
| 500 +: | $ 0.58078 |
| 1000 +: | $ 0.45852 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 800V |
| Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 200µA, 1A |
| Current - Collector Cutoff (Max): | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 400mA, 3V |
| Power - Max: | 100W |
| Frequency - Transition: | 5MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
Description
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KSC5603DTU is a common single NPN transistor that is widely used in many electronic equipment. Its application field is mainly related to pulse, switching, and low noise.KSC5603DTU is an NPN transistor that belongs to the category of the single bipolar transistors, which often operate with a fixed base-emitter potential. This type of transistor is usually used for general-purpose and low-frequency applications since the structures of the transistor are not suitable for high-frequency applications such as microwave oscillator circuits.To understand the working principle of the KSC5603DTU, it is necessary to understand the basic structure of a bipolar transistor. A bipolar transistor is constructed of a semiconductor base and two other semiconductor layers called the \'collectors\' which are often doped with a different type of impurity than has been used in the base to create two distinct semiconductor regions, also known as the \'emitter\' and the \'collector\'. A single bipolar transistor device has three terminals, the base, collector, and emitter. The voltage difference between the collector and emitter produces a potential across the base terminal that is supplied externally.The working principle of the KSC5603DTU can be summarized into two core points. The first is the current gain, which is related to the ratio of the collector current and the base current, i.e., the gain of the KSC5603DTU is hFE which is the ratio of collector current (Ic) and the base current (Ib). The second is the input impedance, which is determined by the internal resistance of the transistor.The working principle of the KSC5603DTU is based on electron flow. An applied voltage to the base terminal will cause electrons to flow from the emitter to the base, then across the base-collector junction. The collector current is then determined by the emitter current and the voltage applied between the collector-base junction.The KSC5603DTU is a versatile type of transistor that can be adapted for many different applications, due to its wide range of working principles. This device is particularly suited for power transistor applications, due to its high current gain and its low input impedance which reduces the amount of heat generated by the device.Furthermore, the KSC5603DTU has a low noise figure and is suitable for pulse, remote sensing and driver applications. It can also be used in amplifier circuits.In summary, the KSC5603DTU is a versatile single NPN transistor that is capable of providing a wide range of applications. Its wide range of working principles allow it to be used in a wide range of applications, such as power transistor applications and amplifier circuits. Its low noise figure and low input impedance make it suitable for pulse, remote sensing and driver applications.
The specific data is subject to PDF, and the above content is for reference
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