
Allicdata Part #: | KSD2012YYDTU-ND |
Manufacturer Part#: |
KSD2012YYDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 3A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Throu... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 5V |
Power - Max: | 25W |
Frequency - Transition: | 3MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Formed Leads |
Supplier Device Package: | TO-220F-3 (Y-Forming) |
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KSD2012YYDTU Application Field and Working Principle
KSD2012YYDTU is a type of single Bipolar Junction Transistor (BJT), first introduced in the year 2012 by Korean Semiconductor Company (KSC). It uses the NPN structure and consists of three layers, the emitter, base and collector. It is widely used in many applications including audio amplifier, voltage regulator, motor driver, and voltage multiplier.
The basic operation of the KSD2012YYDTU is based on the flow of junction current which occurs due to the differences in the charges at the P-N junctions of the device. The P-N junctions form due to the doping of the layers, with each layer made of opposite charges relative to each other. When a Voltage is applied across the Base-Emitter junction, electrons get attracted towards the P-N junction, leaving the base region with a positive charge. This in turn, will cause a reduced barrier at the base-emitter junction, allowing electrons to flow through the emitter-base junction, and thus forms a current carrying path. This flow of electrons results in a current in the base which is proportional to the applied voltage.
The current flowing through the base is known as the base current (Ib) and this along with the current flowing through the emitter-collector junction act as the input and output current of the device. When there is a current flowing through the base, it will also cause current to flow into the collector, thus resulting in a voltage across the collector-emitter junction. This voltage variation is known as the voltage gain (AV) of the device and is expressed as the ratio of the output voltage and the input voltage. The KSD2012YYDTU has a voltage gain of approximately 200.
The usage of the KSD2012YYDTU is not limited to the application for which it was developed. It can be used for a variety of purposes ranging from simple amplification to complex power management applications. For instance, it can be used to control the speed of a motor, or to generate Pulse Width Modulation (PWM) signals to control the speed or intensity of a LED. It is also suitable for use in audio amplifiers and can be used as a voltage regulator to maintain a constant voltage or current.
Overall, the KSD2012YYDTU is an excellent device for a variety of applications, offering good efficiency and high performance. It is easy to use, offers an excellent performance and has a wide range of applications. The unique design of the device makes it a highly reliable option for any application.
The specific data is subject to PDF, and the above content is for reference
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