Allicdata Part #: | KSD261GBU-ND |
Manufacturer Part#: |
KSD261GBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 20V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 500mA 500mW Thro... |
DataSheet: | KSD261GBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 1V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSD261 |
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Transistors are an important component of many analogue and digital circuits. Bipolar (BJT) transistors are particularly important for the success of modern electronics. The KSD261GBU is a single BJT transistor that has unique characteristics which make it an ideal choice for many applications.
The KSD261GBU is specifically designed to be a low voltage, medium power NPN transistor with a rated power dissipation of 1.56 Watts. The transistor features an interesting and unique variant of the 2N3904 configuration, allowing for a relatively wide range of possibilities and uses. It has a maximum collector-emitter voltage of 25V and a continuous collector current of up to 250mA. The transistor also features a low collector and emitter saturation region, meaning it can handle large amounts of current with minimal distortion of the output waveform.
One of the most common application fields for the KSD261GBU is in low voltage amplifiers and regulators. Due to its low voltage rating and low distortion characteristics, the transistor is an ideal choice for these applications. Its low voltage rating also makes it suitable for battery operated devices. In addition, the transistor can be used for voltage switching and other conversion purposes, such as converting a low voltage signal into a stronger one.
The working principle of the KSD261GBU is based on the behavior of the three electrodes that make it up, namely the Base, Emitter and Collector. The Base and Emitter are carbon layers connected to each other, while the Collector is a metal plate that is placed on top of the two. When a current is applied to the Base, its electrons flow towards the Collector, leaving a positive charge on the Base and a negative charge on the Collector. This causes the Collector current to increase, and thus the output of the transistor is increased.
The KSD261GBU is an important component of many analog and digital circuits, and its obvious advantages make it an ideal choice for many applications. With its low voltage and medium power rating, it can be used in low voltage amplifiers and regulators, as well as for voltage switching and conversion. Furthermore, its low collector and emitter saturation region means it can handle large amounts of current with minimal distortion.
The specific data is subject to PDF, and the above content is for reference
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