Allicdata Part #: | KSD261CGBU-ND |
Manufacturer Part#: |
KSD261CGBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 20V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 500mA 500mW Thro... |
DataSheet: | KSD261CGBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 1V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSD261 |
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The KSD261CGBU is a high-frequency, high-gain, low-noise, single NPN bipolar junction transistor (BJT). It is a commonly used BJT transistor in many electronic and electrical applications. The KSD261CGBU is designed for use in applications that require high-frequency operation, with the frequency range of 10GHz and the device having gains of more than 50dB. It has a wide range of uses, from analog gain control in broadcast systems to digital switching and output power control.
The KSD261CGBU has a number of features that make it suitable for a variety of applications. First, it is manufactured with a high breakdown voltage, offering a wide range of operating voltages. It also has excellent current transfer capabilities, with a collector-emitter saturation voltage range of 0.2V to 0.50V and a collector-base saturation voltage range of 0.6V to 0.8V. In addition, it has excellent high-frequency response capabilities, with a frequency range of 10GHz and a gain of 50dB or more.
The KSD261CGBU is also designed with low junction capacitance, low noise figure and high stability over temperature and aging. The device has a good thermal dissipation rate, allowing it to be used in applications that involve high power levels. In addition, the device is highly reliable and has a long operating life.
The working principle of the KSD261CGBU is based on the BJT structure. It is designed with a base-collector junction, which allows for current to flow from the collector to the base. This current flow is controlled by the base-emitter junction, where the base-collector current is multiplied by the gain of the BJT. This gain is determined by the area ratio between the base and emitter.
In the KSD261CGBU, the base-emitter junction has been designed with a low "on" voltage, allowing for it to be easily switched on and off. This allows for precise control of the device, allowing for better accuracy and response time. In addition, the device also has a low output impedance, which prevents signal distortion due to the base-collector voltage drop.
The KSD261CGBU is suitable for use in a variety of applications, from analog gain control to digital switching and output power control. It is also increasingly being used for high-performance radio frequency applications, including amplifiers, radio receiver systems and radio transmitter systems. The device is also suitable for use in a wide range of industrial applications, including power demodulation as well as control and sensing.
The specific data is subject to PDF, and the above content is for reference
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