KSD2058YTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 200mA, 2A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 5V
Power - Max:	1.5W
Frequency - Transition:	400kHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F

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Introduction to KSD2058YTU Transistor

The KSD2058YTU is a single-discrete, NPN bipolar junction transistor (BJT). It is designed for use in general-purpose, low-frequency applications such as signal processing and amplifying in audio circuits. It is especially suited for use in applications requiring very fast switching speeds and low distortion.

Physical Characteristics

The KSD2058YTU has a surface-mount package that measures 2.0mm x 2.3mm. It has a collector-to-emitter breakdown voltage of 120 volts and an operating temperature range of -25 to +85⁰C. The maximum power dissipation is 625 mW and the maximum junction temperature is 175⁰C.

Electrical Characteristics

The KSD2058YTU has a minimum current gain (HFE) of 30, a maximum collector current of 600 mA, and a maximum collector-emitter voltage of 80 volts. The maximum output power is 900 mW. The maximum collector-base voltage is 150 volts, and the maximum base current is 12 mA. The switching time is 1.2 to 0.8µs.

Application Field of KSD2058YTU

The KSD2058YTU is a reliable and cost-effective solution for audio amplification, signal processing, and general-purpose low-frequency applications. It is well-suited for applications requiring very fast switching speeds, low distortion, and a low profile package.The KSD2058YTU can be used in a wide range of consumer products, automotive electronics, telecom equipment, and medical devices. It is also well-suited for use in power management, DC/DC converters, consumer-electronics and high-end audio applications.

Working Principle of KSD2058YTU

The KSD2058YTU is an NPN bipolar junction transistor (BJT). The BJT consists of three layers: the emitter, base, and collector. Two p-n junctions act as a resistor and a current amplifier. When the base-emitter voltage is greater than the base-collector voltage, the transistor is switched on. A small current through the base-emitter junction then controls a large current through the collector-emitter junction, creating an amplification effect. When the base-emitter voltage is below the base-collector voltage, the current flow is reversed, and the transistor is switched off.

Conclusion

The KSD2058YTU is a reliable, cost-effective, and low-profile single-discrete NPN transistor, designed for general-purpose, low-frequency applications. It is well-suited for audio amplification, signal processing, and applications requiring very fast switching speeds and low distortion. It can be used in a wide range of consumer, automotive, telecom, and medical applications. Through its BJT design, it can amplify current and switch on and off.

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