Allicdata Part #: | KSD227GTA-ND |
Manufacturer Part#: |
KSD227GTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 0.3A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 300mA 400mW Thro... |
DataSheet: | KSD227GTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 50mA, 1V |
Power - Max: | 400mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSD227 |
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The KSD227GTA is a two-terminal, four-layer, crystal field-effect transistor (FET). It is part of the family of Transistors - Bipolar (BJT) - Single. It is typically used as a general-purpose FET with low power-dissipation and high switching speed, suitable for audio, switching, and low-power applications.The KSD227GTA has two terminal regions, the source (S) and the drain (D). An electric field is created between these two regions when the gate voltage is 0 or less. This electric field controls the current flow through the channel region through the depletion layer. The kSD227GTA is an enhancement-mode transistor, which means that a positive gate voltage controls the current flow as opposed to an depletion mode transistor.In order to operate the KSD227GTA, a small voltage is applied to the gate terminal. When the gate voltage is 0 V or less, there is no current flow through the transistor. When the gate voltage is above the threshold voltage, a conductive path is formed, and current flows from the source to the drain through this path. This current flow is controlled by the electric field strength across the gate and drain terminals.When the KSD227GTA is used as an amplifier, the gate voltage is biased to the threshold voltage range, which is typically in the range of 0.5-2.5 V. When an input signal is applied to the gate, an amplified output signal is obtained across the source and drain terminals. The gain of the amplifier is determined by the applied gate voltage, the transistor’s device parameters, and the load resistance.In general, KSD227GTA transistors are used as switching elements in applications such as CMOS logic circuits, audio switching, and power control for system power management. They can also be used as low-noise high-frequency amplifiers for audio applications and as amplifiers for instrumentation and metering circuits.Finally, the KSD227GTA can be used in temperature sensing applications. When used in this capacity, the characteristics of the FET are changed based on the temperature. This allows for accurate and precise temperature measurements.Overall, the KSD227GTA is a versatile, low-cost transistor well-suited to a wide range of applications. It has a low power-dissipation, excellent switching speed, and a wide range of operating voltages and gate thresholds. It is an ideal choice for low-power, audio, switching and temperature sensing applications.
The specific data is subject to PDF, and the above content is for reference
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