KSD288WTU Allicdata Electronics
Allicdata Part #:

KSD288WTU-ND

Manufacturer Part#:

KSD288WTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 55V 3A TO-220
More Detail: Bipolar (BJT) Transistor NPN 55V 3A 25W Through H...
DataSheet: KSD288WTU datasheetKSD288WTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 55V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Power - Max: 25W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: KSD288
Description

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KSD288WTU, also known as 2SC3000 or 2SC3000E, is a semi-insulated NPN bipolar junction transistor (BJT) manufactured by Shanghai EDA. It is an epitaxial-base PNPN power switching transistor with a maximum total power dissipation of 16W. The KSD288WTU has its uses in situations where an efficient transistor with an excellent high-frequency performance is required.

Application Fields

The KSD288WTU is primarily used in inverter circuit applications for motors, such as the driving of relays, AC light dimmers and inverters for air conditioners, etc. The KSD288WTU is also suitable for high-frequency switching circuits such as alarms, electronic toys and electronic switching power supplies.

Working Principle

The working principle of the KSD288WTU is similar to that of other bipolar junction transistors. It consists of a base, an emitter, and a collector. The emitter-collector junction is known as the ‘active region’, where the majority of current flow happens. The collector-base junction, on the other hand, is the ‘inactive region’. A voltage applied to the base-emitter junction causes only a small current to flow into the base. The result is that a relatively large current flows out of the collector and into the emitter. This is known as the ‘amplifying’ effect, as the signal applied to the base is amplified by the transistor.

Advantages of KSD288WTU

The major advantages of the KSD288WTU include its small size, high efficiency, and high frequency performance. It occupies a very small space, allowing it to be used in all types of circuit designs. It also has the highest current gain for any commonly available NPN transistor and is capable of operating at higher temperatures than other transistors. The high-frequency performance of the KSD288WTU makes it ideal for use in high-frequency switching applications.

Disadvantages of KSD288WTU

Despite the many advantages of the KSD288WTU, there are certain drawbacks associated with its use. The transistor’s high frequency performance is limited by its maximum frequency of 20MHz. Above this frequency, the current gain of the transistor decreases significantly. The KSD288WTU also has limited power handling capabilities and is not suitable for applications requiring large power outputs.

Conclusion

The KSD288WTU is a semi-insulated NPN bipolar junction transistor intended for power switching applications. Its small size, high efficiency, and excellent high-frequency performance make it an ideal choice for use in inverter circuits, high-frequency switching circuits, and other applications requiring an efficient transistor. Despite its advantages, the KSD288WTU has certain drawbacks such as its limited operating frequency and power handling capabilities, so it is important to consider these factors when deciding whether or not to use this transistor.

The specific data is subject to PDF, and the above content is for reference

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