KSD261CYBU

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The KSD261CYBU is a PNP silicon transistor specifically designed for use with logic level devices. It is a high-performance device for low-voltage applications that require low current consumption, high switching speed and low noise. The transistor has been optimized for use in high-end high-speed applications such as integrated circuits, switching power supplies and motor control. In addition, the KSD261CYBU offers superior protection against electrostatic discharge (ESD) and is RoHS compliant.

The KSD261CYBU is a PNP bipolar junction transistor (BJT), which means it has three terminals: the base, the emitter and the collector. When the base is activated, it allows current to flow from the collector to the emitter. In other words, it acts as a current-controlled switch. The KSD261CYBU has a maximum collector current (Ic) of 400 mA and a maximum breakdown voltage (BVcbo) of 150 V. This device is designed to operate at a voltage range between 15 V and 30 V and works within a maximum temperature range of -55°C to +150°C.

The operating principles of the KSD261CYBU device generally involve the application of electrical current to the base terminal. When this happens, current from the collector flows to the emitter and current from the emitter flows to the collector. This is known as “current gain” and it allows the device to control current with greater precision than a purely resistive device. The current gain of the KSD261CYBU is between 11 and 20, which is relatively high for a BJT. This higher gain makes the device ideal for applications where current needs to be precisely controlled and high-speed switching is needed.

The KSD261CYBU device is primarily designed to be used in low-voltage applications that require precision current control. In addition, its high current gain and low-voltage operation make it well-suited for high-frequency applications, such as integrated circuits, switching power supplies and motor control. The device also features protection against ESD and has a relatively low power dissipation rating, making it an ideal choice for applications where power efficiency is of paramount importance. The KSD261CYBU is a versatile transistor that is suitable for a wide variety of applications.

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