KSD261CGTA Discrete Semiconductor Products |
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| Allicdata Part #: | KSD261CGTATB-ND |
| Manufacturer Part#: |
KSD261CGTA |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 20V 0.5A TO-92 |
| More Detail: | Bipolar (BJT) Transistor NPN 20V 500mA 500mW Thro... |
| DataSheet: | KSD261CGTA Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.02998 |
| 6000 +: | $ 0.02606 |
| 10000 +: | $ 0.02216 |
| 50000 +: | $ 0.01955 |
| 100000 +: | $ 0.01738 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 20V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 1V |
| Power - Max: | 500mW |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | KSD261 |
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?The KSD261CGTA is a single, bipolar junction transistor (BJT), widely used for switching and amplification applications. This type of transistor allows for much faster switching as well as higher current handling capacity than other types of transistors.
A KSD261CGTA is composed of three layers of semiconductor material, a base, a collector, and an emitter. The collector has two connections, and the emitter has a single connection. When a voltage is applied to the collector, it allows current to flow through the emitter. This current then creates an artificial charge on the base and amplifies the current across the collector-emitter junction.
The KSD261CGTA is generally used in power switching applications and power amplifiers, power supplies, motor drives, and other applications where high current or high frequency switching is needed. In power amplification, the KSD261CGTA allows for higher power output than many other transistor solutions without sacrificing gain. In power switching, the high speed switching necessary for circuits such as DC-DC converters is enabled due to its high switching speed.
The KSD261CGTA is an NPN transistor, meaning it operates in a circuit configuration with a negative voltage at the base and a positive voltage at the collector. Because it can handle higher currents, the KSD261CGTA is able to provide higher power output. Additionally, this type of circuit can also be used in more complex circuits with more than two transistors in a circuit, allowing for more complex and varied behavior.
When considering the working principles of the KSD261CGTA, the goal is to move charge carriers through the junction between the emitter and collector. This is accomplished by applying a voltage across the base and the collector, causing current to flow through the emitter. The current through the emitter then creates an artificial charge on the base and amplifies the current across the collector-emitter junction.
The current amplifier action of the KSD261CGTA is also enabled by its ability to act as a switch. When the base voltage is greater than the emitter voltage, the device operates in an “open” state, allowing current to flow freely through the collector and emitter. When the base voltage is less than the emitter voltage, the device operates in a “closed” state, blocking current from flowing between the collector and emitter.
The KSD261CGTA is a versatile transistor solution for a wide range of applications, allowing for switching and amplification in high frequency, fast-changing circuits. In addition to its excellent switching speed and current handling capacity, the KSD261CGTA is also able to provide higher power output and higher gains than many other transistor solutions.
The specific data is subject to PDF, and the above content is for reference
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KSD261CGTA Datasheet/PDF