Allicdata Part #: | KSD5041RBU-ND |
Manufacturer Part#: |
KSD5041RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 20V 5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 5A 150MHz 750mW T... |
DataSheet: | KSD5041RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 340 @ 500mA, 2V |
Power - Max: | 750mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSD5041 |
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Transistors - Bipolar (BJT) - Single
The KSD5041RBU is a bipolar junction transistor (BJT), also known as a junction field-effect transistor (JFET). It is commonly used in many power and signal control circuits, and provides an important function of amplifying signals to drive larger loads. It is a single-stage, self-biased amplifier consisting two N-type and one P-type semiconductor regions joined together.
Application Field
The KSD5041RBU is mainly used in audio-frequency and low–level signal-amplifying applications. Its low noise and wide-bandwidth features make it suitable for high-frequency applications. It is used in radio frequency amplifiers, video amplifiers, audio amplifiers and low-level signal monitoring systems. It is also perfectly suited for military communications, medical applications and instrumentation systems.
Working Principle
The KSD5041RBU consists of two components, an N-channel and a P-channel, that are joined together. These components are connected to three terminals, called the emitter, base, and collector. When a voltage is applied to the base, it controls the flow of electrons from the emitter to the collector. This is how the transistor amplifies the signal. The transistor’s structure and function help it to produce a larger current than the input current, thus providing the amplification.
The base-to-emitter voltage of a BJT transistor acts like an ON/OFF switch. When the voltage is very low, the base-to-emitter voltage of the N- and P- channels is reversed, and the transistor is "Off". When the voltage increases, and a higher base-to-emitter voltage is applied, the base-to-emitter voltage of the N- and P- channels is forward and the transistor is "On". The voltage increases until it reaches the desired amp rating, at which point it is "Off" again.
To understand how the KSD5041RBU amplifies a signal, it is necessary to understand how the collector current and base current impact each other. When a current is applied to the base, the collector current increases exponentially. Since the collector current is proportional to the size of the base current, the transistor can amplify the input current. This means that a small input current will result in a larger output current.
Conclusion
The KSD5041RBU is a versatile, highly reliable, and efficient transistor often used in audio-frequency and low–level signal-amplifying applications. It has a low noise and is well-suited for high-frequency applications. The transistor consists of two components, an N-channel and a P-channel, that are joined together and act as an ON/OFF switch when voltage is applied to the base. This control over the base-to-emitter voltage allows it to amplify the signal and produce a larger current than the input current. As a result, the KSD5041RBU offers reliable and efficient amplification of a signal in many different applications.
The specific data is subject to PDF, and the above content is for reference
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