KSD526O

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 300mA, 3A
Current - Collector Cutoff (Max):	30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 500mA, 5V
Power - Max:	30W
Frequency - Transition:	8MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	KSD526

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - Single

The KSD526O is a high performance single bipolar junction transistor that is suitable for a wide range of applications. It has been designed to meet the requirements of high voltage, high speed and low power applications. The KSD526O is a NPN type transistor, with a collector-emitter voltage of up to 175V and a collector current of up to 700mA. It has a maximum switching frequency of 10GHz, and is suitable for applications such as power control, high speed switching and amplifier gain control. The KSD526O has a couple of different working principles. The first is the principle of current gain, which is the ratio between the output current and the input current. The second is the principle of voltage gain, which is the ratio between the output voltage and the input voltage. The KSD526O is a current-driven device, meaning that it is driven by a current rather than a voltage. It is also an active device, meaning that it is capable of providing its own amplification. The current gain of the KSD526O is typically between 60 and 80, and the voltage gain is typically between 1 and 3. The KSD526O is commonly used in the following applications: • Power control circuits• High speed switching circuits• Amplifier gain control circuits• Differential amplifier gain control• Voltage regulator circuits• Current regulator circuits• Transistor-transistor logic circuits• Automotive applicationsThe KSD526O is also suitable for high power applications, as its collector-emitter voltage is up to 175V. Its collector-emitter saturation voltage is also very low, typically between 0.2V and 0.5V. This makes the KSD526O an ideal choice for switching applications, as it will not cause excessive power losses during operation. The KSD526O is also relatively easy to use, as many of its electrical characteristics can be adjusted using a few simple components. For example, the current gain can be adjusted by changing the base current, and the voltage gain can be adjusted by changing the emitter resistor. Overall, the KSD526O is a high performance single bipolar junction transistor that is suitable for a wide range of applications. Its current and voltage gains are adjustable, and it is suitable for high power applications. It is also relatively easy to use, and is an ideal choice for switching applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description