KSD526Y Allicdata Electronics
Allicdata Part #:

KSD526Y-ND

Manufacturer Part#:

KSD526Y

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 4A TO-220
More Detail: Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Throu...
DataSheet: KSD526Y datasheetKSD526Y Datasheet/PDF
Quantity: 623
1 +: $ 0.44730
10 +: $ 0.39375
100 +: $ 0.30177
500 +: $ 0.23854
1000 +: $ 0.19083
Stock 623Can Ship Immediately
$ 0.49
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Power - Max: 30W
Frequency - Transition: 8MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: KSD526
Description

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The KSD526Y is a single bipolar junction transistor (BJT). It is a three-terminal device that enables current flow from its base terminal to its collector terminal. The KSD526Y can be used in analog, digital and mixed signal circuits, providing increased power for the device.

The KSD526Y can be used for many applications including switches, amplifiers, oscillators, and microprocessors. It is a versatile device that can be used in many types of circuits. It is typically used in power transistors, power drivers, and power modules. The KSD526Y is a high-power device that is capable of delivering high current and voltage levels.

The KSD526Y has several key features that make it ideal for a wide range of applications. It is capable of providing low power dissipation and high current output which make it suitable for many power systems. It has wide operating temperature range, making it suitable for many industrial and military applications. The KSD526Y has high electrical noise immunity, making it ideal for high speed circuits. Finally, the KSD526Y has a low power consumption, making it more energy-efficient.

The KSD526Y has a unique working principle based on the current flow between its base and its collector. An electric current consisting of electrons is generated at the base. This current flow drives an electrical current between the collector and the base. Depending upon the design of the transistor, this current will either be switched on or off, allowing for increased power or decreased power output from the transistor.

The working principle of the KSD526Y is dependent on the transistor\'s three main components: the base, the collector, and the emitter. The base is the component which generates the electric current. The collector and the emitter are the components which allow the current to flow from the base to the collector. This current flow is controlled by the amplification of the current, which is dependent on the resistance between the collector and the base. This resistance is referred to as the transistor\'s gain.

The KSD526Y is an important component within many power circuits. It is capable of providing high current, low power dissipation, and high electrical noise immunity, making it suitable for many different applications. It also has a unique working principle based on the current flow between its base and collector, further enabling it to provide increased power output. Therefore, the KSD526Y is a versatile component that is perfectly suited for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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