Allicdata Part #: | KSD560RTSTU-ND |
Manufacturer Part#: |
KSD560RTSTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 100V 5A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 5A ... |
DataSheet: | KSD560RTSTU Datasheet/PDF |
Quantity: | 800 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 3mA, 3A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 3A, 2V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | KSD560 |
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KSD560RTSTU Application Field and Working Principle
Transistors are electrical components that plays an essential role in the circuitry of various electronic and computer systems. KSD560RTSTU is a single bipolar junction transistor (BJT). It is widely used in a range of applications, including telecommunication, medical, automotive, and consumer electronics.
BJTs are three-terminal devices comprising of a base, collector, and emitter. These terminals are connected to a P-type semiconductor material on one side and an N-type on the other side. The base is a thin layer between the P and N sides, which helps in creating a larger surface area of the P-N junction. The junction is responsible for controlling the flow of current through the transistor.
KSD560RTSTU has a number of distinct characteristics and advantages that make it an attractive option for various applications. It is a medium-power transistor, with a maximum collector-emitter voltage of 65V, and a maximum collector-emitter current of 90mA.
In addition, KSD560RTSTU is a low-noise BJT integrated into a single package, maximizing convenience and compatibility. It has a low thermal resistance of 0.5°C/W, which ensures efficient heat dissipation to maintain a stable temperature during operation. KSD560RTSTU can withstand temperatures of up to 150°C, making it highly reliable in harsh conditions.
The working principle of KSD560RTSTU can be explained by analysing the three terminals. Applying an input voltage between the base and emitter, an electric current flows through the base. This current is amplified, creating a larger electrical current that runs through the collector. Ultimately, the output current flows between the collector and emitter terminals.
KSD560RTSTU is suitable for a wide range of applications, especially in high-quality audio amplifiers. It is also used in low-voltage motor drives, voltage regulators, power converters, and switch-mode power supplies. Moreover, it is an ideal device for communications and tone control circuits.
KSD560RTSTU combines all features of a transistor in an easy-to-use package. The device is easy to mount and configure, enabling users to get up and running quickly. It also comes with built-in protection against over-temperature and over-current, ensuring reliable and consistent performance. With its advanced features and performance, KSD560RTSTU is one of the best BJT transistors available today.
The specific data is subject to PDF, and the above content is for reference
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