KSD560R

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 3mA, 3A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 3A, 2V
Power - Max:	1.5W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	KSD560

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KSD560R is a type of single bipolar transistor, which can be used for a variety of applications. It is a PNP transistor, meaning that, when combined with a negative voltage source, it can be used to create a current in the negative voltage source. This type of transistor is often used in audio applications where the current is used to drive a speaker or other audio device. The KSD560R also has a wide range of features, such as its ability to operate at a maximum current of 100mA, making it suitable for many different electronic projects.The KSD560R is part of the TO-220 SMD family of single transistors and is made of silicon-germanium alloy. This material offers excellent circuit protection and stability, making it suitable for a variety of applications. The KSD560R also has a low collector-emitter saturation voltages, which allows for better power efficiency in circuits. With its wide range of features and excellent packaging, the KSD560R is ideal for use in many different projects.As a single bipolar transistor, the KSD560R works by using a base and collector terminals to create a current in the collector-emitter junction. The base-emitter junction is biased with a small current, which is supplied by the base terminal. This bias current controls the amount of current that can flow from the collector to the emitter. As more current flows from the collector to the emitter, the junction will start to saturate, and the current will start to decrease. This property of semiconductor materials makes the KSD560R well-suited for use in high-current applications.When power is applied to the KSD560R, current will flow from the collector to the emitter, creating a voltage drop across the collector-emitter junction. The voltage drop will cause the base-emitter junction to become forward-biased, allowing more current to flow from the collector to the emitter. The current gain of the transistor is determined by the current flowing through the base-emitter junction and the voltage across the collector terminal.Due to its excellent circuit protection, power efficiency and wide range of features, the KSD560R is an ideal choice for many different applications, such as audio systems, microcontroller power supplies, and other components that require high current operation. Its low collector-emitter saturation voltages also make it a great choice for use in alternative energy systems, such as solar or wind energy. The KSD560R is also suitable for use in consumer electronics and industrial automation applications.In conclusion, the KSD560R is a single bipolar transistor with a wide range of features and applications. It is made of a silicon-germanium alloy and has excellent circuit protection, power efficiency, and a low collector-emitter saturation voltages. Due to its versatile applications, the KSD560R is a great choice for designers and builders looking for a reliable and efficient transistor.

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