
Allicdata Part #: | KSD560OTU-ND |
Manufacturer Part#: |
KSD560OTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 100V 5A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 5A ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 3mA, 3A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 3000 @ 3A, 2V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | KSD560 |
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The KSD560OTU is a single bipolar junction transistor (BJT). It is a high-gain NPN device which is specifically designed for use in RF and microwave circuits.
The KSD560OTU is well-suited for use as an amplifier, oscillator, mixer, or frequency multiplier in a variety of high-frequency applications. It has a wide range of operating frequencies, from about 300MHz to 3GHz.
The KSD560OTU is an excellent choice for use in applications requiring low noise, high gain, and low distortion. It is also well-suited to applications requiring short-circuit protection or thermal protection.
The KSD560OTU has a high operating temperature range, up to +175°C, and a low thermal resistance. It is also inexpensive, making it a popular choice for many applications.
The working principle of the KSD560OTU is based on the operation of a bipolar junction transistor (BJT). Bipolar transistors are among the most widely used active devices in the field of electronics. They can be used for a variety of functions, such as amplifiers, oscillators, mixers, and frequency multipliers.
In its most basic form, a bipolar transistor consists of three layers of doped material. These layers are known as the emitter, base and collector. The emitter layer is injected with more electrons than the base, creating a current which then flows from the emitter to the collector.
The base-emitter and collector-base junctions act as a control valve, allowing current to pass through or blocking it, depending on the voltage applied. This control is used to amplify signals, as the amplified signal emerges from the collector.
The KSD560OTU has a high gain, meaning that it can amplify small signals to a larger output. It also has low noise and low distortion, meaning that it can provide a clean signal output.
The KSD560OTU is widely used in a variety of different RF and microwave applications. It can be used as an amplifier, oscillator, mixer, or frequency multiplier, in both linear and non-linear drive and control circuits.
It is also suitable for various other applications, such as communications systems, test and measurement equipment, and radar and navigation systems.
The KSD560OTU is a reliable and cost-effective device, making it an attractive choice for a variety of high-frequency applications. It is used in a wide range of products and applications, including telecom, automotive, industrial, and medical fields.
The specific data is subject to PDF, and the above content is for reference
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