KSD568RTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	7A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 500mA, 5A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 3A, 1V
Power - Max:	1.5W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

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KSD568RTU is a bipolar junction transistor (BJT) designed for high speed switching applications in remote access networks and telecommunications systems. It works by allowing current to flow between two circuits when a small input voltage is applied. The KSD568RTU has a low saturation voltage, low threshold voltage, and fast switching speed. Additionally, it is capable of handling high-current applications.KSD568RTU is commonly used in remote access networks and telecommunications systems where high speed and accurate control are required. It is also suitable for power-supply switching applications. It is particularly useful in devices that require low power consumption and high accuracy, such as telecom gateways, modems, and radios.The KSD568RTU has two pins - an emitter and a base. The emitter is the input for the transistor, and the base regulates the current flow between the emitter and the collector. When a small voltage is applied to the base terminal, current flows from the emitter through the base and then flows from the collector. This current flow can be precisely regulated by the control voltage applied to the base terminal.The KSD568RTU has a low saturation voltage, allowing it to operate accurately and efficiently when current is drawn from the collector terminal. This low saturation voltage makes it suitable for applications where precise control of current is required. It is designed to work efficiently and accurately at high speeds, making it suitable for use in high speed switching applications.The KSD568RTU is made up of two transistors, one NPN bipolar transistor and one PNP bipolar transistor, connected in a Monolithic Microwave Integrated Circuit (MMIC) device. The NPN transistor acts as a switch, while the PNP transistor amplifies the signal. The transistor structure allows the KSD568RTU to switch at speeds up to 250MHz while maintaining low power consumption.The KSD568RTU also has a low forward voltage gain and a relatively low threshold voltage. This makes it ideal for applications where high accuracy is needed as well as for applications that are sensitive to noise. It also has a low reverse transfer capacitance and a low output resistance, making it suitable for applications where there is a need for precision control.Finally, the KSD568RTU has a low base resistance, which is useful for applications where low power consumption is required. This makes the KSD568RTU an ideal choice for power supply switching applications. It is also suitable for telecom gateways, modems, and radios as it has a low threshold voltage and fast switching speed. Overall, the KSD568RTU is a versatile transistor that is suitable for a wide range of applications.

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