KSD569OTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	7A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 500mA, 5A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 3A, 1V
Power - Max:	1.5W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

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Introduction to KSD569OTU

KSD569OTU is a monolithic integrated circuit designed for high voltage power switch applications. It is a type of BiCMOS device which combines a bipolar junction transistor (BJT) with a field-effect transistor (FET). This type of device is commonly used in power switch applications where a low-loss switch is desired.

Features of KSD569OTU

The KSD569OTU offers a number of features that make it an attractive choice for applications requiring high voltage power switching. These include:• High voltage rating: The KSD569OTU can be operated at a maximum voltage of up to 600V. This makes it suitable for applications that require high voltage operation.• Low on-resistance: The KSD569OTU offers a low on-resistance of 0.75 Ohm. This property makes it an ideal candidate for applications that require a low RDS(on).• Fast switching: The KSD569OTU can switch at frequencies of up to 100kHz. This makes it suitable for applications that require fast switching.• Built-in Undervoltage Lockout: The KSD569OTU features an internal undervoltage lockout (UVLO) circuit. This prevents the device from switching at voltages below a certain threshold.

Application Fields of KSD569OTU

The KSD569OTU can be used in a variety of applications. These include:• High voltage switching applications: The KSD569OTU can be used in applications that require high voltage operation. Examples include motor controls, lighting controls, and switching power supplies.• Low on-resistance applications: The device can be used for applications that require low on-resistance. This includes power management, audio amplifiers, and battery charging.• Fast switching applications: The device can be used in applications that require fast switching speeds. This includes pulse- or signal-controlled switching and digital control systems.

Working Principle of KSD569OTU

The KSD569OTU is a type of BiCMOS device. This means that it combines a bipolar junction transistor (BJT) with a field-effect transistor (FET). The BJT is used as the main switch and the FET is used as the driver switch.The KSD569OTU operates like a two-port device. It has an input port and an output port. When the input port is supplied with a voltage, the device turns on and allows current to flow from the input to the output. When the voltage at the input is removed, the device turns off and stops current flow.The KSD569OTU also features a built-in undervoltage lockout (UVLO) circuit. This circuit prevents the device from activating if the voltage at the input is below a certain threshold.

Conclusion

KSD569OTU is a high voltage power switching device. It is a type of BiCMOS device which combines a bipolar junction transistor (BJT) with a field-effect transistor (FET). The device is suitable for applications that require high voltage operation, low on-resistance, and fast switching. The device operates like a two-port device and features an internal UVLO circuit which prevents it from switching below a certain voltage.

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