KSD526OTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 300mA, 3A
Current - Collector Cutoff (Max):	30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 500mA, 5V
Power - Max:	30W
Frequency - Transition:	8MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	KSD526

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The KSD526OTU is a small-sized, three-terminal NPN switching transistor with a 2A collector current, making it an ideal small signal switch. This device is suitable for applications such as low-noise switching, transistor switching circuits, and small-signal switching. In addition, the KSD526OTU has excellent characteristics such as low-on-state voltage, low-on-state current, and low saturation voltage, as well as fast switching speed, which makes it ideal for use in high-speed switching applications. The KSD526OTU belongs to the family of single-transistor bipolar junction transistors (BJTs). A BJT is a three-terminal device whose gain is proportional to the current flow between the emitter and collector. It is also known as a voltage-controlled current source, as the collector current is controlled by the base current, which in turn is dependent on the base voltage. In the KSD526OTU, the base-emitter junction is forward-biased when a current is supplied to the base, allowing the majority carriers to flow freely from the emitter to the collector. This helps in establishing the collector-emitter current, which is the current flowing from the collector to the emitter. This current is amplified by a factor proportional to the device’s beta (“hFE”) in order to increase the collector current. The KSD526OTU offers a beta of 200, making it suitable for use in smaller switching circuits. The device has an excellent low saturation voltage, which helps in reducing the power wasted in the transistor switch, leading to more efficient performance. Its high current rating of 2A also makes it suitable for use in high-power switching circuits. One of the major advantages of using the KSD526OTU is its fast switching speed. The device can switch from collector-emitter saturation to cut-off faster than most other transistors, which helps improve the functionality of the circuit. This makes it suitable for high-speed switching applications. The KSD526OTU also offers excellent temperature stability. It has a wide temperature range of -55°C to +125°C, which makes it suitable for use in a range of industrial and commercial applications. The device also offers excellent load-duty capability, allowing it to handle high loads without any problems. The KSD526OTU also offers excellent ESD protection, which helps protect the device from electrostatic discharges. This device is available in a variety of package options and can be used in a wide range of applications, including digital, analog, and power switching circuits. Overall, the KSD526OTU is an excellent choice for small-signal switching and other high-speed applications. With its excellent characteristics, fast switching speed, and wide temperature range, the device offers an attractive solution for a variety of applications.

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