Allicdata Part #: | LET9045C-ND |
Manufacturer Part#: |
LET9045C |
Price: | $ 59.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 80V 9A M-250 |
More Detail: | RF Mosfet LDMOS 28V 300mA 960MHz 17.7dB 59W M243 |
DataSheet: | LET9045C Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 53.87380 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 17.7dB |
Voltage - Test: | 28V |
Current Rating: | 9A |
Noise Figure: | -- |
Current - Test: | 300mA |
Power - Output: | 59W |
Voltage - Rated: | 80V |
Package / Case: | M243 |
Supplier Device Package: | M243 |
Base Part Number: | LET9045 |
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The LET9045C is a field-effect transistor (FET) specifically designed to be used in radio frequency (RF) applications. It is a highly reliable, low power non-volatile device that can be used in various circuits, from standard amplifiers to sophisticated digital systems. The LET9045C is a metal-oxide semiconductor (MOSFET) type of FET, which is one of the most widely used devices in RF applications. Due to its high speed, low power consumption and low noise characteristics, it is employed in radios, televisions, mobile phones, and other consumer electronics.
The LET9045C has four pins, labeled as Drain, Gate, Source, and Substrate. The drain pin is used to output the voltage or current that is being regulated and the source pin, which serves as the ground, is the pin to which the drain voltage or current is connected. The gate pin is responsible for controlling the conductivity of the FET, while the substrate pin is used to provide additional control over the gate’s conductivity.
The LET9045C works on the principle of bipolar junction transistors (BJTs). Bipolar junction transistors are three-terminal devices with a current-controlled gate; the gate voltage controls the current that flows through the source and drain terminals of the FET. In the case of the LET9045C, the gate voltage is determined by the logic levels of the Gate-Source pins. When the Gate-Source voltage is low, the FET is turned off, and when the voltage is high, the FET is turned on.
The LET9045C is a versatile device that can be employed in a wide range of RF and digital applications. It can be used as a power amplifier, an oscillator, a linear amplifier, a switch, an amplifier with feedback loop, an impedance adapter, a voltage-controlled oscillator, and many other electronic circuits. It is also used in RF applications such as remote control, radar, and satellite communications, and in digital applications such as logic circuits and microcontrollers. The LET9045C is suitable for both low-voltage and high-voltage applications and has a wide operating temperature range.
The LET9045C can also be employed in power electronics, where it is often used to control the switching of high-power circuits. The device offers high reliability and accurate control of power conversion. It can be used for power supplies, DC-DC converters, AC motor controls, and solar inverters. In power applications, the LET9045C operates in a rugged environment and is highly resistant to voltage and current spikes.
In summary, the LET9045C is a highly reliable, low power MOSFET that is specifically designed for radio frequency applications. It is suitable for use in a wide range of RF and digital circuits and can be used as a power amplifier, an oscillator, a switch, and a voltage-controlled oscillator. Furthermore, it is suitable for use in power electronics, where it can be used to control the switching of high-power circuits. Its high reliability, low power consumption, and accurate control abilities make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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