Allicdata Part #: | LET9045STR-ND |
Manufacturer Part#: |
LET9045STR |
Price: | $ 26.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | RF MOSFET LDMOS 28V POWERSO-10RF |
More Detail: | RF Mosfet LDMOS 28V 300mA 960MHz 18.5dB 45W PowerS... |
DataSheet: | LET9045STR Datasheet/PDF |
Quantity: | 1000 |
600 +: | $ 24.08960 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 18.5dB |
Voltage - Test: | 28V |
Current Rating: | 1µA |
Noise Figure: | -- |
Current - Test: | 300mA |
Power - Output: | 45W |
Voltage - Rated: | 80V |
Package / Case: | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) |
Supplier Device Package: | PowerSO-10RF (Straight Lead) |
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The LET9045STR is an RF transistor that acts as an amplifier with applications in various electronics devices and gadgets. Using field-effect technology, it has the ability to amplify electronic signals in the range of microwave frequencies, up to about 26 GHz. It also has wide-bandwidth characteristics and low noise, making it suitable for wireless communications, as well as instrumentation amplifiers, filters and oscillators.
The LET9045STR is an N-channel depletion mode MOSFET, which is designed to operate in the RF and microwave frequency range – typically with a cutoff frequency of 2 GHz. It has an operating frequency range of up to 26 GHz, and it is available in 4 different versions. It has various features, including an on-chip DC bias for better performance, thermal protection, and ESD protection.
This device is used extensively in the design of communications systems and other power electronics applications. Its features make it suitable for a variety of RF applications such as amplifiers, filters, mixers, oscillators, and transmitters.
The working principle of the LET9045STR is quite simple. It uses a bias voltage to control the Flow of electrons in the N-channel depletion mode transistor. The N-channel is connected to the drain of the device, and the bias voltage is applied to the Gate of the transistor. As the bias voltage increases, more electrons can flow through the device at a greater rate, thus increasing the current flow in the circuit. The current flow will then be amplified and sent to the output of the device.
The output signal is determined by several parameters, such as the input power, bias voltage, and the device characteristics. The gain of the device depends on the bias voltage, which can be adjusted depending on the application. As the bias voltage is increased, the signal gain is also increased and vice-versa. This allows for better signal performance, as well as better control of the output signal.
The LET9045STR has a wide range of application in the field of wireless communication, instrumentation amplifiers and filters, oscillators, and other RF-related products. It is a very reliable, robust and cost-effective solution for all kinds of RF applications and it is widely used in the industry.
The specific data is subject to PDF, and the above content is for reference
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