LET9060C

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The LET9060C RF device is a lateral trench-gate power MOSFET (metal-oxide semiconductor field-effect transistor, or MOSFET) made by Philips Semiconductors. This device is suitable for high frequency applications due to its superior Rds-on (drain-source resistance) and high breakdown voltage. In this article, we will discuss the main application field of this device and the working principle of the device.

The LET9060C is mainly used in RF power amplifiers, such as amplifiers for mobile phones, cordless phones and base stations. It provides superior performance in terms of efficiency and output power, as it has excellent Rds-on, low input capacitance, and high breakdown voltage. Other applications may include RF switching, RF power conversion, and power supply applications.

An MOSFET is a field-effect transistor (FET) whose gate voltage determines the conductivity between drain and source. In a lateral trench-gate MOSFET, the gate is curved to reduce a concentrated field in the drain. The LET9060C is constructed with a double trench-gate structure for better thermal stability and higher breakdown voltage. The device also features a higher Rds-on, which makes it suitable for high-frequency applications.

The working principle of the LET9060C is based on its construction. The trench-gate acts like an insulated gate around the drain, which isolates it from the rest of the structure and prevents the buildup of static charges. This effectively removes the "elephants foot" structure of a traditional MOSFET and improves their drain current capability. The novel trench-gate also creates a high velocity field-effect channel with a low velocity drift region that allows for higher withstand voltage.

When a voltage is applied between the gates and the source of the LET9060C, a channel of electrons is created. Depending on the voltage, the channel will be either resistive or conductive. When the channel is in its conductive state, electric current will flow between the source and the drain. This current can be used to power circuits and other components.

Overall, the LET9060C is a high-frequency MOSFET that offers superior performance and low power consumption. This device is ideal for applications that require high drain current and withstand voltage for reliable operation. It is also suitable for RF power amplifiers, RF switching, RF power conversion, and power supply applications.

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