LET9070FB

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	945MHz
Gain:	16dB
Voltage - Test:	28V
Current Rating:	1µA
Noise Figure:	--
Current - Test:	400mA
Power - Output:	70W
Voltage - Rated:	80V
Package / Case:	M250
Supplier Device Package:	M250

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<p>The LET9070FB is a widely used field effect transistor (FET) designed to handle high-frequency, radio frequency (RF) signals. This transistor may be used for a variety of applications, including amplifying, direct detection, and data transfer, among others.</p><p>An FET is composed of three main parts: a source, a drain, and a gate. The LET9070FB is a metal-oxide-semiconductor field-effect transistor (MOSFET), which relies on the movement of electrons through a semiconductor material to control electrical current. The source and drain form the boundaries of a thin channel through which electrons are able to move. The energy barrier between the source and drain is lowered by applying a voltage to the gate. This is called the threshold voltage, and when it is reached the FET is operating in its “on” state, allowing current to flow.</p><p>The LET9070FB is designed to handle signals in the frequency range of 2-6GHz, and is capable of achieving highly efficient operation in this range due to its low gate-drain capacitance. This allows it to operate at higher frequencies without significant distortion. It also has excellent linearity performance over the operating frequency range, making it well suited for amplifying signals. Furthermore, due to its rugged construction, the LET9070FB can withstand high thermal and mechanical stresses.</p><p>The LET9070FB is particularly well suited for use in direct detection applications, such as mobile phones and wireless networks. Direct detection is used to detect received signals and determine whether a data transmission is taking place. In this application, the LET9070FB provides high-linearity performance and low noise, which ensures that the transmission can be accurately detected. It is also used in high frequency amplifiers, data transfer, and audio amplifiers.</p><p>In summary, the LET9070FB is a metal-oxide-semiconductor field-effect transistor designed to handle high-frequency, radio frequency signals. It is capable of operating in a frequency range of 2-6GHz and performing highly efficient operation due to its low gate-drain capacitance. It is well suited for direct detection applications, high frequency amplifiers, data transfer, and audio amplifiers. In addition, the LET9070FB can withstand high thermal and mechanical stresses, making it an ideal choice for a variety of applications.</p>

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