Allicdata Part #: | 497-13571-ND |
Manufacturer Part#: |
LET9070CB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSF RF N CH 80V 12A M243 |
More Detail: | RF Mosfet LDMOS 28V 400mA 945MHz 16dB 80W M243 |
DataSheet: | LET9070CB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 945MHz |
Gain: | 16dB |
Voltage - Test: | 28V |
Current Rating: | 12A |
Noise Figure: | -- |
Current - Test: | 400mA |
Power - Output: | 80W |
Voltage - Rated: | 80V |
Package / Case: | M243 |
Supplier Device Package: | M243 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The LET9070CB is a power amplifier designed specifically for ultra-wideband (UWB) applications. This amplifier is based on monolithic microwave integrated circuit (MMIC) technology designed with CMOS processing. Its application fields include enhanced performance of public address systems, particle accelerators, antenna array systems, point-to-point microwave links, and mobile base stations. The LET9070CB also offers a high degree of control, easy integration and reduced design time.
The LET9070CB provides an amplifier with extremely wide bandwidth performance that can be tuned quickly and easily. This feature allows engineers to create systems that range from low power to medium power levels in a wide frequency range. The broad bandwidth allows systems to be designed with an operating range up to 6GHz and can be tuned over that range.
The LET9070CB is a high power device with a low distortion and high linearity capability. The low distortion and high linearity of the device enable the amplifier to produce a stable output with low intermodulation and amplitude ripple. This feature makes it an ideal choice for demanding public address systems and particle accelerator applications. It is also designed to operate at very high temperature ranges up to 205C, which makes it ideal for use in harsh environments.
The working principle of the LET9070CB is based on the Field Effect Transistor (FET) technology. This technology is an essential element of the power amplification module, which utilizes the field-effect action of an electric field in order to control and amplify electric signals. This technology increases the power output of the amplifier and decreases the noise produced by it. The FET also allows high linearity of the signals, enabling it to be used in applications such as terrestrial microwave links, receivers and transceivers.
The LET9070CB is a RF power amplifier that is versatile and easily integrated into a wide variety of designs. It is designed to offer maximum performance and reliability, while providing an attractive solution to the demanding applications of wireless communication. This device is an ideal choice for the those in need of a low cost and higher performance solution for their wireless communication needs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
LET9045F | STMicroelect... | 66.31 $ | 1000 | FET RF LDMOS 80V 9A M-250... |
LET9045S | STMicroelect... | 41.32 $ | 117 | TRANSISTOR RF POWER N-CH ... |
LET9060F | STMicroelect... | 75.24 $ | 48 | MOSFET N-CH 80V 12A M-250... |
LET9060STR | STMicroelect... | 29.53 $ | 1000 | RF FET LDMOS 80V POWERSO-... |
LET9060TR | STMicroelect... | 0.0 $ | 1000 | RF FET LDMOS 80V POWERSO-... |
LET9045 | STMicroelect... | 41.32 $ | 85 | TRANSISTOR RF POWER N-CH ... |
LET9060S | STMicroelect... | 44.44 $ | 24 | IC RF POWER MOSFET N-CH P... |
LET9045STR | STMicroelect... | 26.5 $ | 1000 | RF MOSFET LDMOS 28V POWER... |
LET9045TR | STMicroelect... | 26.5 $ | 1000 | RF MOSFET LDMOS 28V POWER... |
LET9045C | STMicroelect... | 59.26 $ | 1000 | MOSFET N-CH 80V 9A M-250R... |
LET9060C | STMicroelect... | 75.24 $ | 1 | MOSFET N-CH 80V 12A M-243... |
LET9120 | STMicroelect... | 132.5 $ | 1000 | MOSFET N-CH 80V 18A M-246... |
LET9150 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 80V 20A M-246... |
LET9060 | STMicroelect... | 0.0 $ | 1000 | IC RF POWER MOSFET N-CH P... |
LET9070CB | STMicroelect... | 0.0 $ | 1000 | MOSF RF N CH 80V 12A M243... |
LET9070FB | STMicroelect... | 0.0 $ | 1000 | RF MOSFET LDMOS 28V M250R... |
LET9180 | STMicroelect... | 0.0 $ | 1000 | IC RF TRANSISTOR LDMOS M2... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...