Allicdata Part #: | 497-12419-2-ND |
Manufacturer Part#: |
LET9060STR |
Price: | $ 29.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | RF FET LDMOS 80V POWERSO-10RF |
More Detail: | RF Mosfet LDMOS 28V 300mA 960MHz 17.2dB 60W PowerS... |
DataSheet: | LET9060STR Datasheet/PDF |
Quantity: | 1000 |
600 +: | $ 26.84680 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 17.2dB |
Voltage - Test: | 28V |
Current Rating: | 12A |
Noise Figure: | -- |
Current - Test: | 300mA |
Power - Output: | 60W |
Voltage - Rated: | 80V |
Package / Case: | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) |
Supplier Device Package: | PowerSO-10RF (Straight Lead) |
Base Part Number: | LET9060 |
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LET9060STR is a commonly used radio frequency MOSFET. The structure and manufacturing process of this industrial product are optimized to achieve high stability and performance in a wide range of applications. It is widely used in modern consumer electronics, communications, computers and other technology-related products because of its unique characteristics.
LET9060STR has a high current capacity and a low impedance. It can be used to control the amplification of RF signals, making it suitable for consumer electronics, wireless telecommunication systems and industrial power amplifiers. The average gate-source voltage of the MOSFET is applied in order to provide reliable operation in applications from 100 MHz to 500 MHz. The on-resistance of the Let9060STR is also very low which allows it to be used in high-performance receivers and high-power transmitters.
The working principle of LET9060STR is based on the field effect transistor (FET) principle. It is a four-layer device consisting of a source and a drain that form the same semiconductor material. The gate, which is the control electrode, overlays the source and the drain, and the Electric Field generated by the gate modulates the current passing through the source-drain. The LET9060STR has an oxide layer between the gate and the source-drain which helps to isolate the two layers, allowing voltage to be correctly regulated.
By varying the gate voltage of the LET9060STR MOSFET, the resistance between the source and the drain can be regulated, thus controlling the flow of current from the source to the drain. This principle is widely used in many industrial applications such as wireless transmitters, wireless receivers and amplifiers.
The LET9060STR MOSFET is a popular choice for use in many RF applications. It has very low on resistance, high current capabilities and reliable operation in a wide range of applications. The high-performance MOSFET is suitable for use in many consumer electronics, communications, computers and other technology-related products.
The specific data is subject to PDF, and the above content is for reference
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LET9060STR | STMicroelect... | 29.53 $ | 1000 | RF FET LDMOS 80V POWERSO-... |
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