Allicdata Part #: | LET9045TR-ND |
Manufacturer Part#: |
LET9045TR |
Price: | $ 26.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | RF MOSFET LDMOS 28V POWERSO-10RF |
More Detail: | RF Mosfet LDMOS 28V 300mA 960MHz 18.5dB 45W PowerS... |
DataSheet: | LET9045TR Datasheet/PDF |
Quantity: | 1000 |
600 +: | $ 24.08960 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 18.5dB |
Voltage - Test: | 28V |
Current Rating: | 1µA |
Noise Figure: | -- |
Current - Test: | 300mA |
Power - Output: | 45W |
Voltage - Rated: | 80V |
Package / Case: | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Supplier Device Package: | PowerSO-10RF (Formed Lead) |
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LET9045TR is an advanced field effect transistor (FET) device used for a wide range of RF application including radio, cellular and broadband. It is a CMOS FET (complementary metal-oxide-semiconductor field-effect transistor) that features low power consumption and a wide range of operating frequencies. It is used as an amplifier, mixer, antenna switch, or attenuator in high frequency applications. This article will discuss the application field and working principle of LET9045TR.
Application Field
The LET9045TR is primarily used in the RF application field. It has a broad range of frequency operation from 50 MHz to 4GHz, making it suitable for a variety of applications such as mobile radio, cellular communication, broadcast radio, base stations, satellite communication, high-speed communication, and wireless local area networks. It is also suitable for any application where high power and high frequency are required. It has high efficiency, enabling it to perform at the highest power level.
The LET9045TR has high linearity and fast switching speed. This makes it beneficial for signal processing and signal control applications. It can be applied in modulators, filters, and signal processors. Moreover, the device can be used in the control of power amplifiers, antenna systems, and base station devices. This makes it suitable for a wide range of applications from audio, video to communication links.
Working Principle
LET9045TR is a complementary metal-oxide-semiconductor (CMOS) field-effect transistor. It consists of two MOSFETs that are structurally complementary to each other. The Gate Control Voltage (GCV) is used to control the conduction characteristics of the FET. The Gate Control Voltage is applied to one terminal of the FET and a Conventional Sourcing Voltage is applied to the other terminal. This combination of voltages is used to control the FET\'s operation.
The LET9045TR operates by selectively channeling current by means of a variable resistance field. As the voltage of the gate control voltage is varied, the resistance field between the source and drain is varied, thus controlling the amount of current flowing through the device. As the resistance field is varied, the resistance of the device is changed, and thus its output. This allows the FET to be used as an amplifier, mixer, attenuator, or antenna switch.
The LET9045TR has a wide range of operations at different frequencies and different power levels. It is capable of providing high linearity and low noise. Additionally, it provides high efficiency and low-power consumption. This makes it suitable for use in different applications, from communication and audio systems to satellite communication and radio communication.
Conclusion
The LET9045TR is an advanced FET device that can be used in a wide variety of RF applications. It has a wide frequency operation range, high linearity and fast switching speed, making it suitable for signal processing and signal control applications. It provides high efficiency and low-power consumption, making it a great choice for applications requiring high power. Overall, the LET9045TR is a great option for a wide range of RF applications.
The specific data is subject to PDF, and the above content is for reference
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