LM5060MM/NOPB Integrated Circuits (ICs)

The LM5060MM/NOPB gate driver consists of an integrated high and low-side driver, a level translator and one driver control logic. The high-side and low-side drivers together are able to drive 10A peak current and 20Vmax gate voltage. This gate driver is proposed for use in devices with current consumption as low as 3mA and a full voltage range of 2.5V to 5.5VThe device includes an over-temperature warning function that can be used to monitor package temperature. It is capable of precision monitoring and control of gate voltage, current and temperature. This gate driver provides a high level of channel-to-channel matching and excellent isolation characteristics.The main application fields of the LM5060MM/NOPB are switching circuits, power supplies, motor control, CCFL inverter and microcontroller based products.Working PrincipleThe LM5060MM/NOPB gate driver operates on the principle of PWM controlled pulse width modulation. The PWM signal is supplied by an external pulse width modulator whose magnitude of the PWM signal is proportional to the input signal. The PWM signal is then fed to the Level Translator which in turn switches the High and Low Side MOSFETs of the power MOSFETs. The pulse provided to the Gate driver depends on the load requirements and will cause variation in the on-time, resulting in Pulse width modulated switching of the MOSFET.This gate driver also includes a built in Protection Circuit which can be used to protect the power MOSFETs against over-current, over-voltage and over-temperature. It also has an Unprotected Mode which allows the Gate Driver to be used to drive two Chips in parallel, which results in Higher Current Capability.The LM5060MM/NOPB Gate Driver also includes a Fault Detection Circuit which detects short circuit between the Drain and Source, short circuit between Drain and Ground and Thermal Shutdown. This helps in protecting the power MOSFETs from being damaged in case of fault conditions.ConclusionThe LM5060MM/NOPB gate driver is a great option for gate driver applications. It has the capability to drive both high-side and low-side MOSFETs with pulse width modulation. It also includes protection circuit and fault detection circuit for safety. It is suitable for a wide range of applications such as switching circuits, power supplies, motor control, CCFL inverter and microcontroller based products.