LM5113QDPRRQ1

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The LM5113QDPRRQ1 is a family of Gate Drivers that are part of Texas Instruments’ portfolio of integrated power modules and system solutions. The LM5113QDPRRQ1 is a full-bridge gate driver for motor control applications. It is designed to drive four high-side and two low-side power switches. It has a wide operating voltage range from 15V to 280V, allowing the use of high voltage external components such as power FETs, diodes and capacitors to drive motors up to 320V.

Features and Benefits

The LM5113QDPRRQ1 gate driver’s features include:

• Supports up to 320V operation
• Dual independent and process-independent outputs
• Differential drive inputs with hysteresis
• Low standby current consumption
• Integrated pre-charge circuit
• Over-temperature protection
• MOSFET gate pre-charge and short circuit protection
• Robust motor supply monitoring
• Pin-programmable drive current up to 2A

Applications

The LM5113QDPRRQ1 gate driver is ideal for driving electric motors, as well as inductive loads such as relays, solenoids and actuators, in automotive and industrial applications. Some of the applications that the LM5113QDPRRQ1 gate driver is suitable for include:

• Electric vehicle drives
• Industrial and home appliances (e.g. fans and pumps)
• Robotic- and actuator-driven systems
• EVSE /Smart Grid applications

Working Principle

The LM5113QDPRRQ1 gate driver works by taking an input voltage (Vin) and converting it into a high-side and low-side gate current to then drive the power FETs. In order to keep the power FETs in the linear region, a low-side voltage is also generated by the LM5113QDPRRQ1 gate driver. This is done by measuring one side of the power FETs (Vds) and converting it into a control voltage (Vcs) that is sent to a comparator to control the low-side gate current. The output of the comparator then drives the gate drivers of the low-side power FETs.

In order to limit the gate voltage, the LM5113QDPRRQ1 gate driver also uses a pre-charge circuit. The pre-charge circuit is designed to raise the low-side gate voltage of the power FETs slowly before the high-side gate voltage is applied, thus allowing the low-side power FETs to turn on quickly. This limits the maximum gate voltage and prevents any over-current of the power FETs.

Additionally, the LM5113QDPRRQ1 gate driver includes short-circuit and over-temperature protections that help to protect the power FETs from any accidental damage. The LM5113QDPRRQ1 also includes a robust motor supply monitoring circuit that ensures that the power FETs are not over-driven.

The LM5113QDPRRQ1 gate driver also features a differential drive input with hysteresis, which allows the user to program the high-side and low-side current limits, as well as the peak current. The LM5113QDPRRQ1 can be programmed to provide a range of drive currents, up to 2A, to ensure maximum efficiency and power savings.

Conclusion

The LM5113QDPRRQ1 gate driver is a robust and high performance gate driver for motor control applications. It is designed to drive high voltage power FETs and features various protections such as over-temperature and short-circuit protections to ensure the power FETs are not damaged. It can also be programmed to provide a range of drive currents for maximum efficiency.

The LM5113QDPRRQ1 gate driver is ideal for a range of applications such as electric vehicle drives, industrial and home appliances, and robotic- and actuator-driven systems. It is a reliable and efficient gate driver for motor control applications.

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