| Allicdata Part #: | 1086-4293-ND |
| Manufacturer Part#: |
MAP5KE10A |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 10V 17V DO204AL |
| More Detail: | N/A |
| DataSheet: |  MAP5KE10A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | 0.00000 |
Specifications
| Voltage - Clamping (Max) @ Ipp: | 17V |
| Supplier Device Package: | DO-204AL (DO-41) |
| Package / Case: | DO-204AL, DO-41, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 500W |
| Current - Peak Pulse (10/1000µs): | 29.4A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 11.1V |
| Voltage - Reverse Standoff (Typ): | 10V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Obsolete |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Description
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MAP5KE10A is a device that is used in TVS - Diodes applications. It is designed to provide protection against overvoltage transients that could occur. The device is a voltage-triggered, bidirectional thyristor that is optimized for use in communications equipment, industrial electronics, and other applications where voltage protection is required. The MAP5KE10A provides high reliability and is manufactured in a compact, hermetically sealed package. The MAP5KE10A device includes two thyristors, an anode, and a gate. When the anode voltage reaches the breakdown voltage (VBO), the device starts to conduct. The gate voltage must be above the minimum threshold voltage for the device to conduct current and the device will remain conducting as long as the anode voltage remains above the breakdown voltage and the gate voltage remains above the threshold voltage. The working principle of the MAP5KE10A is quite simple. When the anode voltage rises above the breakdown voltage (VBO), the device will start to conduct, allowing current to flow. The gate voltage must be above the minimum threshold voltage for the device to conduct current. When the anode voltage falls below the breakdown voltage, or the gate voltage falls below the threshold voltage, the device will cease conduction. The MAP5KE10A device is well-suited for use in a variety of protection applications, such as circuit and telecom equipment, where protection against overvoltage transients is required. It can also be used as a surge suppressor for low-voltage DC circuits. The MAP5KE10A also provides transient protection of up to 10kV, making it ideal for applications where high voltage protection is required.The MAP5KE10A is designed for use in a variety of applications, especially those requiring high voltage protection. It is a reliable device which offers circuit protection from overvoltage transients, and can be used in both telecom and industrial applications. In order to ensure reliable performance, the MAP5KE10A should be properly installed and connected. It is important to follow the manufacturer\'s instructions to ensure proper installation. Additionally, it is important to test for correct functionality prior to connecting other components.Overall, the MAP5KE10A is an excellent device for use in TVS - Diodes applications. It is a reliable, compact device which offers protection against overvoltage transients in a variety of environments. It is designed for easy installation and can provide up to 10kV of protection. The MAP5KE10A is a great choice for those who require high voltage protection.
The specific data is subject to PDF, and the above content is for reference
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| MAP5KE110CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 110V 177V DO204... |
| MAP5KE11A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11V 18.2V DO204... |
| MAP5KE11AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11V 18.2V DO204... |
| MAP5KE11CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11V 18.2V DO204... |
| MAP5KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11V 18.2V DO204... |
| MAP5KE120A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
| MAP5KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
| MAP5KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
| MAP5KE120CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
| MAP5KE12A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
| MAP5KE12AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
| MAP5KE12CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
| MAP5KE12CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
| MAP5KE130A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 130V 209V DO204... |
| MAP5KE130AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 130V 209V DO204... |
| MAP5KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 130V 209V DO204... |
| MAP5KE130CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 130V 209V DO204... |
| MAP5KE13A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13V 21.5V DO204... |
| MAP5KE13AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13V 21.5V DO204... |
| MAP5KE13CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13V 21.5V DO204... |
| MAP5KE13CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13V 21.5V DO204... |
| MAP5KE14A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 14V 23.2V DO204... |
| MAP5KE14AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 14V 23.2V DO204... |
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