MAP5KE160A Allicdata Electronics
Allicdata Part #:

1086-4333-ND

Manufacturer Part#:

MAP5KE160A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 160V 259V DO204AL
More Detail: N/A
DataSheet: MAP5KE160A datasheetMAP5KE160A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 259V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 1.9A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 178V
Voltage - Reverse Standoff (Typ): 160V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppressors) - Diodes are widely utilized to protect electronic circuits from transients, such as lightning and electrostatic discharges. The MAP5KE160A TVS diode is a 400W uni-directional transient voltage suppressor that can be used in a variety of electronic applications.

The MAP5KE160A has a peak pulse power of 400W, which is 40 times the average power in the IPP (peak pulse power) rating. It can handle pulses in the range of 5.0 to 15.0 kV, making it suitable for applications with high voltage levels. The device also includes a zener diode for ESD protection up to 21 kV. Additionally, the device is also available in surface mount and thru-hole packages.

The MAP5KE160A diode has a range of applications in communication equipment, including cable modems, HFC networks, and ISP equipment. It is also suitable for use in automotive equipment, medical equipment, and consumer electronics. In addition, it can be used for protection in industrial environments, such as power transfer networks and motor drives.

The MAP5KE160A TVS diode utilizes a body diode as the active region. The body diode is a pn junction diode between the source and the drain of the MOSFET structure. The body diode is designed to conduct current in the forward direction and has a low forward voltage drop. When a voltage (either positive or negative) exceeds the breakdown voltage of the body diode, the current through the device increases exponentially.

In normal operation, the device is reverse biased, so the body diode provides very little current to the circuit. However, when a transient voltage is applied, the device can be activated and will conduct current from the source to the drain. The device can handle extremely high rates of current, up to 40A. Once the transient voltage is dissipated, the device returns to its reverse bias condition and the current decreases.

The MAP5KE160A diode has a low on-state voltage and a high surge capability, making it suitable for use in high power applications. The device is designed to protect circuits from a variety of transients, including ESD, EFT, and lightning transients. It is also extremely reliable, with a high mean time to failure rating.

The MAP5KE160A TVS diode is suitable for a wide range of high power applications. The device can handle up to 400 W of peak pulse power, and also includes a zener diode for ESD protection up to 21 kV. It is available in both surface mount and thru-hole packages, and is extremely reliable with a high MTTF rating. With its low on-state voltage and high surge capability, the MAP5KE160A is an ideal choice for high power applications.

The specific data is subject to PDF, and the above content is for reference

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