MAP5KE6.5AE3 Allicdata Electronics
Allicdata Part #:

1086-4422-ND

Manufacturer Part#:

MAP5KE6.5AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 6.5V 11.2V DO204AL
More Detail: N/A
DataSheet: MAP5KE6.5AE3 datasheetMAP5KE6.5AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 11.2V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 44.7A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 7.22V
Voltage - Reverse Standoff (Typ): 6.5V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient Voltage Suppressor (TVS) diodes are a type of semiconductor used to protect electrical circuits from brief voltage surges or spikes that often happen in power supplies. The MAP5KE6.5AE3 is one such device, and it offers many advantages over its predecessors. This article will discuss the application fields and working principles of the MAP5KE6.5AE3.

The MAP5KE6.5AE3 is designed for use in industry applications that require high power Clamping voltages and low capacitance. It is suitable for applications in power supplies, peripherals, automotive, telecommunications and consumer electronics. In addition, it can be used to protect against over-voltage, over-current, ESD and spike protection in communications and consumer electronics.

The MAP5KE6.5AE3 is designed to provide protection against transient voltage spikes up to 60v. It does this by clamping the voltage to a safe level, eliminating over-voltage conditions. It also provides an additional benefit by limiting inrush current, reducing the amount of EMI generated. In addition to these features, it also features a high transient surge current capability up to2800V/µs.

The working principle of the MAP5KE6.5AE3 is based on the avalanche breakdown principle. When a voltage spike occurs, the sudden increase in electric field strength across the reverse-biased PN junction causes the electrons in the n-region to be forced towards the P-region. This avalanche multiplication of charge carriers leads to an increase in current, which then causes the voltage to be clamped to a safe level.

The MAP5KE6.5AE3 also provides high frequency jitter immunity, which is critical in today’s high speed digital systems. It is also able to provide ESD protection up to 8KV. In addition, it provides improved power distribution efficiency, reduced energy wastage, and enhanced safety in automotive circuits.

The MAP5KE6.5AE3 is a high performance TVS diode, designed for use in high voltage applications. Its avalanche breakdown principle provides voltage clamping and jitter immunity for today’s industry applications. It is suitable for a wide range of applications, from power supplies to automotive, and with its low capacitance, it provides improved power distribution efficiency.

The specific data is subject to PDF, and the above content is for reference

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