Allicdata Part #: | 1086-4445-ND |
Manufacturer Part#: |
MAP5KE75A |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 75V 121V DO204AL |
More Detail: | N/A |
DataSheet: | MAP5KE75A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 121V |
Supplier Device Package: | DO-204AL (DO-41) |
Package / Case: | DO-204AL, DO-41, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 4.1A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 83.3V |
Voltage - Reverse Standoff (Typ): | 75V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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Transient voltage suppression (TVS) devices are high-speed energetic electronic components primarily used to protect equipments, circuits, and systems from electrical overstress such as electrostatic discharge (ESD), lightning surge transients, and other high-frequency energy events. The MAP5KE75A is a unidirectional Silicon TVS diode designed to protect sensitive electronic components against voltage transients caused by lightning and other environmental conditions. This document explains the application fields and working principle of the MAP5KE75A.
Application Fields
The primary purpose of the MAP5KE75A is to protect sensitive electrical circuits from electrical overshoot caused by lightning, electrostatic discharge, and other transients. This makes it useful in a wide range of applications such as airline communication, medical monitoring, military systems, automotive electrical systems, consumer electronics, and factory automation. It can also be used to protect sensitive circuitry from harmful higher amplitude conditions, even if the current does not exceed the device maximum power rating. This makes it suitable for use in telecommunications, RF antenna systems, and metering applications.
Working Principle
The MAP5KE75A consists of an avalanche diode with a specifically structured PN junction, which improves the capability of the device to suppress transients. The structure of this diode is so precise that a single component can effectively clamp the voltage. The robust construction of the diode ensures that it can withstand continuous high stress without long term failure. The MAP5KE75A is also designed to provide a low capacitance and high peak surge current handling capability.
The avalanche diode on the MAP5KE75A works by clamping voltage at its breakdown voltage (VBR). This voltage is the maximum voltage that can be tolerated by the device. When a voltage transient occurs, the voltage of the transient increases the voltage across the diode to the breakdown voltage. The diode then enters an avalanche breakdown and current flows through it, thus limiting the amount of voltage available to the circuit.
When the transient voltage passes, the voltage across the diode then returns to a normal level, which is typically much lower than the breakdown voltage. In addition, the MAP5KE75A has reverse polarity protection, which prevents the reverse biased breakdown voltage of the device from exceeding the rated forward breakdown voltage. This ensures the safe operation of the device and helps to preserve its long-term reliability.
In summary, the MAP5KE75A is an ideal solution for suppressing voltage surges caused by lightning, electrostatic discharge, and other transients or peaks. It is designed for use in a wide variety of applications and offers unmatched performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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MAP5KE120A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
MAP5KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
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MAP5KE120CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
MAP5KE12A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
MAP5KE12AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
MAP5KE12CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
MAP5KE12CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
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MAP5KE13CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13V 21.5V DO204... |
MAP5KE13CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13V 21.5V DO204... |
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