MAP5KE26A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MAP5KE26A is a high-efficiency transient voltage suppressor (TVS) module, ideal for applications such as power supplies, lighting systems, automotive systems, and computers. The device is configured with an integral circuit board and can protect against sudden transients such as electrostatic discharge (ESD) and surges. This device also acts as a protection diode, thereby preventing a small amount of current from passing through its circuits and interfering with system performance.

The device is designed to be mounted on a printed circuit board (PCB) and offers features such as low capacitance, high surge handling capability, and fast response times. It has a black epoxy plastic package and comes in a TO-220 package. The device is widely used in high precision systems where noise immunity is a critical requirement. Its compact size also makes it suitable for use in confined spaces.

The device has a maximum operating temperature of 125° Celsius and a maximum reverse breakdown voltage of 60 V, which enables the device to protect against high voltage transients. The device also has a high-speed reverse breakdown response time, which enables the device to react to transient voltage disturbances quickly. Furthermore, the device is designed to be very reliable and has a very long service life.

In terms of application field, the MAP5KE26A is mainly used in various consumer electronics sectors, including PC, PV, LCD monitor, automotive, and medical instruments. It is also used in communication and industrial control systems, as well as other applications that require high surge immunity. The device is capable of handling peak reverse voltages of up to 60 V and can be used in applications such as telecommunications, computer systems, power supplies, and automotive systems.

The MAP5KE26A operates on the principle of avalanche breakdown, which occurs when the electric potential between two electrodes is increased beyond a certain level. As this happens, the electrons that were previously located near the electrodes are energized by the applied voltage and accelerated by the electric field. This acceleration results in the electrons colliding with atoms and knocking out higher energy electrons that, in turn, cause electron multiplication. This phenomenon greatly reduces the electrical resistance across the junction, allowing for the passage of large currents.

The MAP5KE26A is constructed from a two-terminal, reverse biased diode junction. During an over-voltage condition, the device utilizes Joule heating to dissipate the excess voltage applied to it. This, in turn, raises the diode junction above the breakdown voltage, which causes electron multiplication and large current flows. These current flows are safely routed away from the circuit, preventing arcing and potential damage.

In summary, the MAP5KE26A is an ideal choice for applications requiring high reliability and surge protection. It has a wide range of operating temperatures and breakdown voltages that make it suitable for many applications. Furthermore, it responds quickly to transient voltage disturbances and can protect against ESD and surges. Finally, its compact size and low capacitance make it an ideal choice for applications that require minimal noise immunity.

The specific data is subject to PDF, and the above content is for reference