MAP5KE11AE3 Allicdata Electronics

MAP5KE11AE3 Circuit Protection

Allicdata Part #:

1086-4302-ND

Manufacturer Part#:

MAP5KE11AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 11V 18.2V DO204AL
More Detail: N/A
DataSheet: MAP5KE11AE3 datasheetMAP5KE11AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 18.2V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 27.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 12.2V
Voltage - Reverse Standoff (Typ): 11V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient Voltage Suppression (TVS) diodes are electrical components designed to protect sensitive components and devices from over-voltage conditions and transient surges. Most TVS diodes have peak pulse power ratings and maximum clamping voltages, and act as a form of protection against electrical transients. The MAP5KE11AE3 is an example of one such TVS diode.

The MAP5KE11AE3 is a unidirectional transient voltage suppression (TVS) diode designed to protect a wide variety of sensitive electronics from over-voltage transients. The device has a dual protection characteristic which combines extremely low leakage and is suitable for both transient over-voltage protection and ESD protection (electrostatic discharge).

The key features of the MAP5KE11AE3 include a breakdown voltage of 11V which provides over-voltage protection for sensitive components; a high peak pulse power rating of 5kW; an operating temperature range of -55°C to +125°C; and a low capacitance, low leakage current for ESD protection.

The application field of the MAP5KE11AE3 is in a wide range of industries, including automotive, appliances, computers, industrial and communications. It can be used for a variety of applications such as protecting components from over-voltage transients, ESD protection, voltage clamping and decoupling. It can also be used in applications such as power line protection, grounding protection, lightning strike protection and shield protection.

The working principle of the MAP5KE11AE3 is based on the diode junction effect. When an over-voltage is applied to the TVS diode, the junction will break-down and conduct current to the ground, clamping the voltage to a safe level and protecting the component from damage. The device increases the dynamic impedance of the over-voltage, which means that its protection works faster than conventional protection devices. As well, the device has a low capacitance and a low leakage current, which make it well suited for ESD protection.

The MAP5KE11AE3 is a high-performance TVS diode which provides reliable protection against over-voltage transients and ESD. Its dual-protection characteristic provides for improved over-voltage protection and higher reliability, and its low capacitance ensures that it is well suited for applications which require fast response times. The device has a wide range of applications, including automotive, industrial, and communications, and its high peak pulse power rating and temperature range make it ideal for protecting sensitive components from electrical transients.

The specific data is subject to PDF, and the above content is for reference

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