MAP5KE130AE3 Allicdata Electronics
Allicdata Part #:

1086-4314-ND

Manufacturer Part#:

MAP5KE130AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 130V 209V DO204AL
More Detail: N/A
DataSheet: MAP5KE130AE3 datasheetMAP5KE130AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 209V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 2.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 144V
Voltage - Reverse Standoff (Typ): 130V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS-Diodes

TVS-diodes, otherwise known as transient voltage suppressors, are components designed to protect sensitive electronic devices from overvoltage due to voltage spikes or surges. They can be used in a wide variety of applications from power supply systems, communication systems, and automotive systems to robotics, consumer electronics, and cell phone applications. The MAP5KE130AE3 is a popular TVS-diode used to protect electronic devices against surge pulses.

MAP5KE130AE3 Application Field

The MAP5KE130AE13 is suitable for applications where power disruption and voltage transients are prevalent due to its ability to withstand very high voltages. This TVS diode is primarily used in the power distribution sector, specifically in applications such as motor control, transformers, and power supplies. With its high ESD protection, it can be used to increase the reliability and safety of electronic devices and systems.

The MAP5KE130AE3 is also very useful for reducing local hotspots and voltage drops in densely packed microelectronic and devices. It is highly reliable and features a low leakage current which makes it an excellent choice for applications which require frequent power interruptions. Additionally, it is an excellent choice for battery-based energy storage systems which experience frequent transients.

Map5KE130AE3 Working Principle

The MAP5KE130AE3 TVS diode works on the principle of avalanche breakdown. This means that the element contains a depletion region which traps any incident electrical pulses and prevents them from reaching downstream components. The diode is designed to trigger and take action quickly to prevent these spikes from damaging sensitive components.

The MAP5KE130AE3 diode can withstand a variety of voltage types including ESD, EFT, and surge pulses. When these pulses reach the diode, the internal configuration of the diode amplifies the surge pulses before directing them to ground, thus protecting downstream components from potential damage.

In terms of its electrical characteristics, the MAP5KE130AE3 is rated for repetitive peak pulse power up to 750 watts and a maximum peak pulse current of 170A. It also has a maximum breakdown voltage of 13 V and is rated for an operating temperature from -40 to 125℃.

Conclusion

The MAP5KE130AE3 is a reliable and versatile TVS diode designed to protect sensitive electronic components from the damaging effects of high voltage transients and surges. It is a great choice for applications in the power distribution sector due to its ability to withstand very high voltages, as well as its low leakage current. Additionally, it provides excellent ESD protection and is an excellent choice for battery-based energy storage systems.

The specific data is subject to PDF, and the above content is for reference

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