MAP5KE45A Allicdata Electronics
Allicdata Part #:

1086-4393-ND

Manufacturer Part#:

MAP5KE45A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 45V 72.7V DO204AL
More Detail: N/A
DataSheet: MAP5KE45A datasheetMAP5KE45A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 72.7V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 6.9A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 50V
Voltage - Reverse Standoff (Typ): 45V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MAP5KE45A TVS - Diodes

The MAP5KE45A is a \'transient voltage suppression diode\', commonly known as a TVS-Diode or Transient Voltage Suppressor. TVS-Diodes are an essential component in a variety of electronic devices and circuit design applications, and the MAP5KE45A is no exception. This device is a bidirectional, low-capacitance, multi-voltage TVS offering excellent clamping and transient protection in a variety of electronic applications.The MAP5KE45A is widely used for clamping and transient protection in various electronic devices, including microcontrollers, analog-to-digital and digital-to-analog converters, LCD displays, ESD protection diodes, and storage media, such as flash memory cards and solid-state drives. It can also be used in automotive, medical, and networking devices, among many others.The MAP5KE45A operates using a breakdown mechanism involving both the avalanche and Zener effects. The avalanche effect, which occurs when the current carried by the diode exceeds its "overdrive current", causes the dielectric material of the diode to break down and allow current to pass. This current is clamped between the breakdown voltage value and some slightly higher voltage level, depending on the specific values of the overdrive current and the device characteristics. The Zener effect, which occurs when the diode is reverse-biased and the depletion region voltage exceeds the breakdown voltage of the device, allows current to pass in the opposite direction, in effect providing reverse-biased protection.The MAP5KE45A utilizes an optimized avalanche-zener action to provide a low reverse leakage and superior protection against both ESD and surges. Its low capacitance of only 1.5pF allows for fast response times and minimal signal distortion. The device is designed to operate from -55°C to +125°C for use in a wide range of temperature-sensitive applications.The MAP5KE45A is available in standard leadless DFN package with an exposed pad, and is rated at 45 VC (CDM), 33VCD (Human Body Model), and 25V for ESD (Air Gap discharge). It also features a low clamping voltage, a 7.2V threshold, and can withstand transient voltages of up to 80V.Overall, the MAP5KE45A is an excellent choice for a variety of applications which require clamping and transient protection. Its low leakage and low capacitance, combined with a wide operating temperature range and high surge withstand capability, make it ideal for use in a variety of temperature-sensitive, high-reliability applications, such as automotive and medical devices.

The specific data is subject to PDF, and the above content is for reference

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