Allicdata Part #: | 1086-4318-ND |
Manufacturer Part#: |
MAP5KE13AE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 13V 21.5V DO204AL |
More Detail: | N/A |
DataSheet: | MAP5KE13AE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 21.5V |
Supplier Device Package: | DO-204AL (DO-41) |
Package / Case: | DO-204AL, DO-41, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 23.2A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 14.4V |
Voltage - Reverse Standoff (Typ): | 13V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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A Transient Voltage Suppressor (TVS) Diode is a device commonly used in circuit protection design to absorb and suppress the voltage surge that occurs in digital electronic systems. The MAP5KE13AE3 TVS Diode is a bidirectional, unidirectional-breakdown type device specifically designed for media access control (MAC) Ethernet systems.
The MAP5KE13AE3 offer surge-current capability of up to 14A and a maximum reverse-breakdown voltage of 13V. The device has an active protection range from 10V to 13V, allowing it to protect digital electronic systems from overvoltage damage. This voltage protection range allows for the operation of the Ethernet system up to five million operations.
The MAP5KE13AE3 features a bidirectional design, which allows it to absorb both positive and negative peak transient events, thus providing reliable protection for Ethernet systems. The body size of the device is quite small and can easily fit into the design of a small package. This allows designers to incorporate the device into the system design without needing to redesign the overall system for a larger body size.
The internal working principle behind the MAP5KE13AE3 involves the use of a field-effect transistor (FET). The FET acts as a voltage-controlled switch with the gate voltage being the control input. When an applied voltage exceeds the threshold for breakdown of the diode, the gate control voltage will cause the FET to open and allow current to flow. This will reduce the overall voltage surge to a safe level, thus protecting the Ethernet system from damage.
The MAP5KE13AE3 is ideal for use in a wide range of application fields, such as automotive, consumer electronics, and industrial applications. Its ability to protect digital systems from overvoltage protection means that it can be used in environments where the device may be exposed to high levels of surge or voltage transients. Additionally, the MAP5KE13AE3 can be used in applications which require very fast response times, as its bidirectional nature allows it to respond almost immediately to voltage changes.
The MAP5KE13AE3 is an ideal device for digital protection applications due to its small size, fast response times, and bidirectional design. Its ability to absorb and suppress voltage transients makes it a reliable choice for digital circuit protection applications, thus ensuring the reliable operation of the system.
The specific data is subject to PDF, and the above content is for reference
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MAP5KE10CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10V 17V DO204AL |
MAP5KE10AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10V 17V DO204AL |
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MAP5KE110A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 110V 177V DO204... |
MAP5KE110AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 110V 177V DO204... |
MAP5KE110CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 110V 177V DO204... |
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MAP5KE11A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11V 18.2V DO204... |
MAP5KE11AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11V 18.2V DO204... |
MAP5KE11CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11V 18.2V DO204... |
MAP5KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11V 18.2V DO204... |
MAP5KE120A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
MAP5KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
MAP5KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
MAP5KE120CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 120V 193V DO204... |
MAP5KE12A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
MAP5KE12AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
MAP5KE12CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
MAP5KE12CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO204... |
MAP5KE130A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 130V 209V DO204... |
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MAP5KE13CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13V 21.5V DO204... |
MAP5KE13CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13V 21.5V DO204... |
MAP5KE14A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 14V 23.2V DO204... |
MAP5KE14AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 14V 23.2V DO204... |
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TVS DIODE 350V 690V CASE 5A
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TVS DIODE 78V 126V DO204AL