Allicdata Part #: | 1086-4320-ND |
Manufacturer Part#: |
MAP5KE13CAE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 13V 21.5V DO204AL |
More Detail: | N/A |
DataSheet: | MAP5KE13CAE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 21.5V |
Supplier Device Package: | DO-204AL (DO-41) |
Package / Case: | DO-204AL, DO-41, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 23.2A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 14.4V |
Voltage - Reverse Standoff (Typ): | 13V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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MAP5KE13CAE3 belongs to TVS-Diodes, which are a transient voltage protection device commonly utilized in electronic systems today. TVS-Diodes are designed to provide protection from over-voltage transients caused by any number of situations, such as lightning, electrostatic discharge (ESD), or other high-energy surges. The MAP5KE13CAE3 is a bi-directional, low capacitance, low leakage, 5.0kW peak power TVS diode.
Application Field
The MAP5KE13CAE3 can be used in a wide variety of applications in the electronics industry. One of the most common uses for this device is for the protection of consumer electronics, such as computers, audio/video systems, and home automation. It can also be used for automotive applications, telecom systems, industrial controllers, and medical equipment. The device also offers multiple protection modes, including reverse polarity, over-voltage, and over-current protection.
Working Principle
The working principles of TVS-Diodes are based on the reverse breakdown voltage of p-n junctions. When an over-voltage transient occurs, it causes increased current to flow in the junction, which in turn causes the junction to rapidly switch into the off-state and block the current from flowing. This is known as avalanche breakdown, and it is this feature that allows the MAP5KE13CAE3 to protect its connected components from electrical over-exertion. The device has a fast response time of just 5 ns, meaning that it can quickly respond to any over-voltage transients and protect the circuit from damage.
The MAP5KE13CAE3 is designed to provide both protection from ESD and over-current surges. It is capable of dissipating up to 5.0kW of peak pulse power, providing good electrical protection for its connected system. In addition, the device has a low leakage current of just 1.5 µA, allowing it to maintain a low power profile while still providing effective protection.
Overall, the MAP5KE13CAE3 is a bi-directional, low capacitance, low leakage, 5.0kW peak power TVS diode that can be used in a variety of applications. It provides robust protection from ESD and over-voltage transients, and its fast response time ensures that the connected systems are well-protected from electrical damage.
The specific data is subject to PDF, and the above content is for reference
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