MAP5KE15AE3 Allicdata Electronics
Allicdata Part #:

1086-4330-ND

Manufacturer Part#:

MAP5KE15AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 15V 24.4V DO204AL
More Detail: N/A
DataSheet: MAP5KE15AE3 datasheetMAP5KE15AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 24.4V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 20.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 16.7V
Voltage - Reverse Standoff (Typ): 15V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MAP5KE15AE3 is an advanced form of breakdown diode, belonging to the general class of Thyristor Surge Protective devices (TSPD) and more specifically to the type of TVS (Transient Voltage Suppressor) diodes. A TVS diode is a solid-state switched device that can absorb large spikes in voltage and divert the surge energy away from sensitive electronics. It is a three-terminal semiconductor device, consisting of an anode, a cathode and a gate.

The MAP5KE15AE3 is designed to protect circuits and components inside those circuits from electrical transients. It can handle very high power levels, up to 4kW in 8/20 μs pulsed-power applications. It also have a very low clamping voltage and can provide a level of protection against transient voltage surges up to 4kV, which is much higher than general coaxial protection diodes. It also provides faster response times and better performance than ordinary transient voltage protection diodes.

The working principle of the MAP5KE15AE3 is simple and straight forward. In the normal mode the device behaves like an open diode. When the applied voltage exceeds a certain threshold, the device is triggered and becomes closed, thus diverting the surge energy away from the sensitive circuitry. The two configurations that are used for the MAP5KE15AE3 action are the avalanche breakdown and the Zener breakdown. In the avalanche breakdown the internal junction voltage of the device is increased by applying a reverse bias voltage. This allows more carriers to enter the junction, thus increasing the device breakdown voltage. In the Zener breakdown configuration the junction voltage is decreased by applying forward bias voltage. This results in the creation of an electric field, which causes electrons to move into the Zener region and thus allowing the current to flow when the Voltage reaches a certain level.

The MAP5KE15AE3 can be used in many applications, such as over-voltage protection in a wide range of circuits, from consumer electronics to industrial applications. It is also suitable for automotive applications, providing protection against high energy transients, such as ElectroStatic Discharge (ESD) and lightning. The MAP5KE15AE3 is also used in circuits such as power supplies, voltage regulators and load switches as a way to provide protection against transient voltages. In some cases, the device is even used as a substitute for conventional transient suppression diodes, due to its superior characteristics.

In conclusion, the MAP5KE15AE3 is an ideal choice for transient voltage protection. Its fast response times, low clamping voltage and high surge energy handling capabilities make it a perfect option for protecting sensitive components from harmful transients. With its wide range of applications, it is a must have for any circuit designer or user looking for reliable transient suppression.

The specific data is subject to PDF, and the above content is for reference

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