MAP5KE85CAE3 Allicdata Electronics
Allicdata Part #:

1086-4464-ND

Manufacturer Part#:

MAP5KE85CAE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 85V 137V DO204AL
More Detail: N/A
DataSheet: MAP5KE85CAE3 datasheetMAP5KE85CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 137V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 3.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 94.4V
Voltage - Reverse Standoff (Typ): 85V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MAP5KE85CAE3 is a TVS - Diodes that offers advanced protection against surge and electrostatic discharge. It is ideal for use in telecommunication devices, including cell phones, laptops, printers, and other electronic equipment. This device has a working principle which combines the electrical characteristics of an avalanche diode and a zener diode to provide superior protection against high-energy ESD events.

The MAP5KE85CAE3 is available in a small 5mm x 6mm SOT23 surface mount package and has a very low dynamic resistance of 0.2 Ω. It ensures a clamping voltage at 8V, withstanding an operating current of 5A in 10/1000 microseconds. It has a maximum break-down voltage of 5.6V and an operating temperature range from 55°C to 150°C. Moreover, the device is provides excellent ESD protection up to 15kV, exceeding the industry class breakdown voltage of 8.0V.

The application field of MAP5KE85CAE3 is kind of wide. It is a great choice for single or multi-line protection of data and signal lines. It can be applied to mobile phone ports, USB ports, headset ports, laptop computers, cameras, and other telecommunications and electronic equipments. In addition, it can also be used in high-speed communications, automotive, and medical electronic equipments. Moreover, it is qualified for use in reflow process (JEDEC J-STD-020A).

The working principle of MAP5KE85CAE3 can be further understood. It has two breakdown modes, one of them is the Zener breakdown and another is the avalanche breakdown. The Zener breakdown mode makes the device turn into a high-resistance and conductive state. This allows the device to protect the connected circuit by reducing the voltage to within a safe range. On the other hand, the avalanche breakdown mode enables the device to absorb electrical energy generated during an ESD event, and thereby dissipate it quickly before it affects the connected circuit.

In conclusion, the MAP5KE85CAE3 is a TVS-Diodes with an advanced protection against surge and electrostatic discharge. It has a small size, specifically 5mm x 6mm SOT23 surface mount package and a very low dynamic resistance of 0.2 Ω. It ensures a clamping voltage at 8V and withstands an operating current of 5A in 10/1000 microseconds. It is widely applicable for single or multi-line protection of data and signal lines in mobile phones, computers, automotive, and medical electronic equipments. The device has two breakdown modes, Zener breakdown and avalanche breakdown and this can provide superior protection against high-energy ESD events.

The specific data is subject to PDF, and the above content is for reference

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