
Allicdata Part #: | 1086-4546-ND |
Manufacturer Part#: |
MAP6KE24AE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 20.5V 33.2V T-18 |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 33.2V |
Supplier Device Package: | T-18 |
Package / Case: | T-18, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 18A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 22.8V |
Voltage - Reverse Standoff (Typ): | 20.5V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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Transient Voltage Suppressor Diode (TVS) is one of the most widely used circuit components. Because of its high performance, flexibility and wide range of applications, it has become a popular choice for various protection and signal processing applications. One of the best-known TVS diodes is the MAP6KE24AE3, manufactured by Philips. This article provides a detailed overview of the application field and working principle of the MAP6KE24AE3.
Application Field of MAP6KE24AE3
The MAP6KE24AE3 is used in numerous applications, such as data protection systems, telecommunications, military applications, automotive systems, and many others. It is particularly suitable for handling transients with a peak pulse power rating of 600W (10/1000 μs surge) and a maximum standoff voltage of 24V. In addition, it can also be used in low capacitance applications, with a Cdv/dt value of 1000 V/μs.
Working Principle of MAP6KE24AE3
The MAP6KE24AE3 employs the principle of avalanche breakdown, which is a phenomenon that occurs in heavily doped semiconductor materials where the current applied can cause the junction to break down. When the voltage exceeds a certain threshold, current in the junction can increase exponentially, creating an “avalanche” of electrons and holes. This breakdown voltage is specified for the TVS diode, and it must be higher than the expected level of voltage in order to provide protection. The avalanche process dissipates the high voltage transients over the junction area, effectively limiting excessive voltage.
In addition, the MAP6KE24AE3 also acts as a clamping device. This means that it acts as a unidirectional device, allowing pulses to be transmitted during normal operation, but blocking high voltage transients in the reverse direction. This is done through the application of differential voltage, which is the difference between the peak voltage and the stand-off voltage divided by the resistance. When the voltage exceeds a certain threshold, the diode interprets this as a short circuit and will begin to conduct current, thereby reducing the voltage.
Conclusion
The MAP6KE24AE3 is a reliable and versatile TVS diode, well suited for a variety of applications. With its high peak pulse power rating, low capacitance, and excellent clamping capabilities, it provides effective protection for circuits against voltage transients. The diode is also easy to integrate into circuits, as it needs only minimal space for installation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MAP6KE200A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
MAP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE27A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V T-1... |
MAP6KE15CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
MAP6KE16CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
MAP6KE18CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
MAP6KE18AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
MAP6KE22AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V T-1... |
MAP6KE27CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V T-1... |
MAP6KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE47CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.2V 64.8V T-1... |
MAP6KE51CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V T-1... |
MAP6KE7.5CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
MAP6KE11AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE200AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
MAP6KE170A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 145V 234V T-18 |
MAP6KE12A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE110AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MAP6KE30A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 25.6V 41.4V T-1... |
MAP6KE18CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
MAP6KE15A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
MAP6KE62CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 53V 85V T-18 |
MAP6KE16CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
MAP6KE120CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE68A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 58.1V 92V T-18 |
MAP66006 | Laird Techno... | 0.08 $ | 1000 | ANT ASSY CARRIER MOLD BLA... |
MAP6KE62AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 53V 85V T-18 |
MAP6KE30AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 25.6V 41.4V T-1... |
MAP6KE56CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
MAP6KE16A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
MAP6KE43CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 36.8V 59.3V T-1... |
MAP6KE9.1CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.78V 13.4V T-1... |
MAP6KE200CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
MAP6KE15AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
MAP6KE9.1A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.78V 13.4V T-1... |
MAP6KE130AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MAP6KE24AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V T-1... |
MAP6KE7.5A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
MAP6KE75AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 64.1V 103V T-18 |
MAP6KE91CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
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