MAP6KE24AE3 Allicdata Electronics
Allicdata Part #:

1086-4546-ND

Manufacturer Part#:

MAP6KE24AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 20.5V 33.2V T-18
More Detail: N/A
DataSheet: MAP6KE24AE3 datasheetMAP6KE24AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 33.2V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 18A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 22.8V
Voltage - Reverse Standoff (Typ): 20.5V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient Voltage Suppressor Diode (TVS) is one of the most widely used circuit components. Because of its high performance, flexibility and wide range of applications, it has become a popular choice for various protection and signal processing applications. One of the best-known TVS diodes is the MAP6KE24AE3, manufactured by Philips. This article provides a detailed overview of the application field and working principle of the MAP6KE24AE3.

Application Field of MAP6KE24AE3

The MAP6KE24AE3 is used in numerous applications, such as data protection systems, telecommunications, military applications, automotive systems, and many others. It is particularly suitable for handling transients with a peak pulse power rating of 600W (10/1000 μs surge) and a maximum standoff voltage of 24V. In addition, it can also be used in low capacitance applications, with a Cdv/dt value of 1000 V/μs.

Working Principle of MAP6KE24AE3

The MAP6KE24AE3 employs the principle of avalanche breakdown, which is a phenomenon that occurs in heavily doped semiconductor materials where the current applied can cause the junction to break down. When the voltage exceeds a certain threshold, current in the junction can increase exponentially, creating an “avalanche” of electrons and holes. This breakdown voltage is specified for the TVS diode, and it must be higher than the expected level of voltage in order to provide protection. The avalanche process dissipates the high voltage transients over the junction area, effectively limiting excessive voltage.

In addition, the MAP6KE24AE3 also acts as a clamping device. This means that it acts as a unidirectional device, allowing pulses to be transmitted during normal operation, but blocking high voltage transients in the reverse direction. This is done through the application of differential voltage, which is the difference between the peak voltage and the stand-off voltage divided by the resistance. When the voltage exceeds a certain threshold, the diode interprets this as a short circuit and will begin to conduct current, thereby reducing the voltage.

Conclusion

The MAP6KE24AE3 is a reliable and versatile TVS diode, well suited for a variety of applications. With its high peak pulse power rating, low capacitance, and excellent clamping capabilities, it provides effective protection for circuits against voltage transients. The diode is also easy to integrate into circuits, as it needs only minimal space for installation.

The specific data is subject to PDF, and the above content is for reference

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