MG1215H-XBN2MM Allicdata Electronics
Allicdata Part #:

F6698-ND

Manufacturer Part#:

MG1215H-XBN2MM

Price: $ 45.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: IGBT MOD 1200V 15A PKG H CRCT:XB
More Detail: IGBT Module Three Phase Inverter with Brake 1200V...
DataSheet: MG1215H-XBN2MM datasheetMG1215H-XBN2MM Datasheet/PDF
Quantity: 1000
80 +: $ 41.73340
Stock 1000Can Ship Immediately
$ 45.9
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 25A
Power - Max: 105W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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MG1215H-XBN2MM is an IGBT module used for motor control and power conversion applications such as solar inverters or electric vehicles. It is designed to regulate electric current with an insulated gate bipolar transistor (IGBT). It features a three-phase, half-controlled bridge type structure, as well as FWD voltage drive technology that enables it to achieve fast switching operation and low forward voltages of between 800 V and 1200 V. Additionally, it has a wide operating temperature range of up to 125 °C.

IGBTs are semiconductor devices combining the properties of both conventional transistors and diodes. An IGBT is basically an insulated-gate field-effect transistor (IGFET) with a p-n-p-n diode connected to the gate-to-source terminal. The gate is held at the same voltage as the source, providing an electrical insulation between them. This means that the external power can be cut off from the device, allowing energy to remain stored in the gate/source junction.

The main advantage of IGBTs is their high switching speeds compared to other power components. This speed makes them well suited for applications such as motor control and power conversion. The MG1215H-XBN2MM leverages this technology to deliver its high performance and efficient operation. Its FWD voltage drive technology also contributes to fast switching times, as it enables a low forward voltage of between 800 V and 1200 V.

The main way an IGBT works is by allowing electric current to flow only in one direction when the control terminal is at a high level. This is known as the "on state" and is when the module is conducting electricity from the source to the load. When the gate voltage is at a low level, the IGBT is said to be in the "off state", meaning it will not conduct electricity from the source to the load.

The MG12105H-XBN2MM incorporates this "on/off" switching technology for motor control and power conversion applications. Its three-phase, half-controlled bridge type structure makes it ideal for applications such as solar inverters, electric vehicles, and more. It also has a wide operating temperature range of up to 125 °C, enabling it to be used in a variety of conditions. This makes the MG1215H-XBN2MM a reliable and high-performance solution for a wide range of applications.

In conclusion, the MG1215H-XBN2MM is an IGBT module designed for motor control and power conversion applications. Its FWD voltage drive technology enables fast switching times, while its three-phase, half-controlled bridge type structure makes it ideal for applications such as solar inverters and electric vehicles. Additionally, its wide operating temperature range of up to 125 °C makes it suitable for a range of conditions. All of these features make the MG1215H-XBN2MM a reliable and high-performance solution for a variety of power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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