MG12400D-BN2MM Allicdata Electronics
Allicdata Part #:

F6484-ND

Manufacturer Part#:

MG12400D-BN2MM

Price: $ 116.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: IGBT 1200V 580A 1925W PKG D
More Detail: IGBT Module Trench Field Stop Half Bridge 1200V 58...
DataSheet: MG12400D-BN2MM datasheetMG12400D-BN2MM Datasheet/PDF
Quantity: 5
1 +: $ 105.60100
10 +: $ 100.50200
25 +: $ 96.86110
Stock 5Can Ship Immediately
$ 116.16
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 580A
Power - Max: 1925W
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 400A (Typ)
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 28nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: D3
Description

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MG12400D-BN2MM Application Field and Working Principle

MG12400D-BN2MM is one of the most popular types of insulated gate bipolar transistors (IGBTs) modules. IGBTs modules are used for power control applications and in the current high speed switching applications. This article will discuss the application fields for MG12400D-BN2MM and its working principle.

Application Fields for MG12400D-BN2MM

MG12400D-BN2MM has a wide range of applications within the power electronics industry. It is widely used in high-power electronic devices such as motor drives, industrial process controllers, uninterruptible power supply (UPS) systems, and renewable energy systems. Additionally, this type of IGBTs module is suitable for voltage doubler applications as it is capable of dealing with fast switching voltages.

MG12400D-BN2MM is popular for many electric vehicle specific applications, especially for traction motor drives, engine control, and other motor drives with high power needs. Moreover, it is also suitable for the solar and wind energy industry due to its high-power capabilities and efficient switching.

Working Principle of MG12400D-BN2MM

MG12400D-BN2MM is a type of power semiconductor, which is also known as an insulated-gate bipolar transistor (IGBT). It is comprised of a voltage/current controlling gate, drain, and source. In the IGBT, the gate is between the drain and source, which controls the voltage and current flow between those two electrodes. When a voltage is applied to the gate, it turns on the IGBT, allowing the current to flow between the source and drain.

The main advantage of IGBTs compared to other power components, such as MOSFETs and thyristors, is that it can provide better design flexibility, higher switching frequency, and improved reliability. Additionally, IGBTs can be used with a wide range of voltages and currents to provide higher-efficiency power control.

Conclusion

In conclusion, MG12400D-BN2MM is one of the most popular types of IGBTs modules. It has a wide range of applications in the power electronics industry. It is suitable for high-power applications such as motor drives, industrial controllers, solar and wind energy systems, and more. Additionally, the working principle of MG12400D-BN2MM is based on the insulated-gate bipolar transistor (IGBT), which provides better design flexibility, higher switching frequency, and improved reliability compared to other types of power semiconductor components such as MOSFETs and thyristors.

The specific data is subject to PDF, and the above content is for reference

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