MG12100W-XN2MM Allicdata Electronics
Allicdata Part #:

F6696-ND

Manufacturer Part#:

MG12100W-XN2MM

Price: $ 108.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: IGBT MOD 1200V 100A PKG W CRCT:X
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: MG12100W-XN2MM datasheetMG12100W-XN2MM Datasheet/PDF
Quantity: 11
1 +: $ 98.55720
10 +: $ 93.79720
Stock 11Can Ship Immediately
$ 108.41
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 140A
Power - Max: 450W
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A (Typ)
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 7.1nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IGBT modules can be divided in two categories, MG and GT. MG12100W-XN2MM, which falls in the MG category, is a large-area and high-power motor control module. It is widely used in servo motor, screw motor, and other large-area motor control systems. It is also suitable for other low-speed and high-torque applications.

MG12100W-XN2MM applies the advanced IGBT switch technology to meet the demand for power efficiency, higher power density and improved reliability in a wide range of industrial, automotive and consumer applications. This IGBT module consists of an insulated-gate bipolar transistor (IGBT) chip, an anti-parallel diode and a heat sink. The IGBT chip contains two components, a metal oxide semiconductor field effect (MOSFET) transistor and a bipolar transistor, in one package.

The working principle of MG12100W-XN2MM depends on its basic IGBT structure. When a voltage applied to the gate terminal of the IGBT, it is turned on, allowing current flow from the emitter to the collector. When the gate voltage is turned off, the IGBT is switched off, blocking current from the emitter to the collector. The anti-parallel diode is used to protect the IGBT against any reverse voltage. The heat sink attached to the module helps to dissipate any excess heat generated by the operation of the IGBT.

The features of MG12100W-XN2MM are impressive. It has excellent commutation performance which greatly benefits motor control applications. Its low saturation voltage, great switching frequency and fast turn-on/off speed help achieve high power conversion efficiency. In addition, the module is highly reliable and can handle high surge current, high source voltage and high temperature easily.

In conclusion, MG12100W-XN2MM is a well-designed IGBT module with strong power efficiency and high power density. It is ideal for a wide range of low-speed, high-torque applications such as motor control, battery charging and power conditioning. It is also suitable for use in consumer electronics, industrial equipment, and automotive electronics applications.

The specific data is subject to PDF, and the above content is for reference

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